Jiangsu Yangjie Runau Semiconductor Co., Ltd
ELECTRICAL CHARACTERISTICS AND RATINGS
KP500-POWER THYRISTOR
Gating
Parameter
Symbol
PGM
Min.
Max.
20
Typ.
Units Conditions
Peak gate power dissipation
Average gate power dissipation
Gate-trigger current
W
W
mA
V
PG(AV)
IGT
4
200
2.5
5
VD =12 V;RL = 3 ohms;Tj = +25 oC
VD = 12 V;RL = 3 ohms;Tj = +25 oC
Gate- trigger voltage
Peak negative voltage
VGT
0.70
VGRM
V
Dynamic
Parameter
Symbol
Min.
Max.
Typ.
Units Conditions
ITM =50 A; VD = 67% VDRM
Delay time
td
3.0
2.5
Gate pulse: VG = 30 V; RG = 10 ohms;
tr = 0.1μs; tp = 20μs
s
ITM =500 A; di/dt =- 10 A/s;
VR =50 V; dV/dt=30V/s ;
VD= 67%VDRM;Tj=125oC
ITM=500A;di/dt=-10A/s;
VR=50 V; Tj=125℃
Turn-off time (with VR = -5 V)
Reverse recovery charge
tq
250
s
Qrr
1500
C
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Symbol
Tj
Min.
-40
Max.
+125
Typ.
Units
oC
Conditions
Operating temperature
Storage temperature
Tstg
-40
+140
0.04
0.008
17
oC
Thermal resistance - junction to
case
RΘ (j-c)
RΘ (c-s)
P
oC/W Double sided cooled
oC/W Double sided cooled
kN
Thermal resistance - case to
heatsink
Mounting force
Weight
13
15
W
0.26
kg
* Mounting surfaces smooth, flat and greased
http://www.chinarunau.com
Page 2 of 3