Datasheet > KP500A1200V

KP500A1200V

更新时间： 2024-09-23 07:08:03

品牌	Logo	应用领域
其他 - ETC		可控硅
页数	文件大小	规格书
3页	490K
描述
可控硅KP500A1200V

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KP500A1200V 数据手册

KP500A1200V

国标型普通晶闸管平板式

(

)

Chinese Type Fast Thyristors (Capsule Version)

Liujing rectifier co., Ltd.

FEATURES

1). Center amplifying gate

2). Metal case with ceramic insulator

3). Low on-state and switching losses

TYPICAL APPLICATIONS

I_T(AV)

1039A

1). AC controllers

V_DRM/V_RRM1100~1800V

2). DC and AC motor control

3). Controlled rectiﬁers

I_TSM

I²t

11 KA

605 10³A²S

THE MAIN PARAMETERS

VALUE

℃

SYMBOL

I_T(AV)

CHARACTERISTIC

TEST CONDITIONS

T_j(

)

UNIT

Min Type Max

℃

T_hs=55

1039

500

180 half sine wave 50Hz

Double side cooled,

Mean on-state current

125

℃

T_hs=101

V_DRM

V_RRM

Repetitive peak off-state voltage

Repetitive peak reverse voltage

V_DRM&V_RRM,tp=10ms

_DSM&V_RSM= V_DRM&V_RRM+100V

125 1100

125

1800

I_DRM

I_RRM

Repetitive peak off-state current

Repetitive peak reverse current

V_D= V_DRM

V_R= V_RRM

I_TSM

I²t

Surge on-state current

I²T for fusing coordination

Threshold voltage

10ms half sine wave

V_R=0.6V_RRM

125

605 A²s*10³

V_TO

r_T

0.85

125

On-state slop resistance

Peak on-state voltage

0.42

I_TM=1700A, F=15KN

V_DM=0.67V_DRM

V_TM

dv/dt

125

1.43

Critical rate of rise of off-state voltage

1000 V/

V_DM= 67%V_DRMto1300A,

125

500

di/dt

Critical rate of rise of on-state current

Gate pulse t_r≤0.5 s I_GM=1.5A

I_rm

t_rr

Reverse recovery current

Reverse recovery time

Recovery charge

145

I_TM=700A,tp=1000 s,

di/dt=-20A/ s,

125

VR=50V

Q_rr

I_GT

V_GT

I_H

1087

300

2.5

Gate trigger current

Gate trigger voltage

Holding current

V_A=12V, I_A=1A

V_DM=0.67V_DRM

0.8

250

V_GD

Non-trigger gate voltage

125

0.3

At 180 sine, double side cooled

Clamping force 15KN

Thermal resistance

Junction to heatsink

℃

0.035

R_th(j-h)

F_m

Mounting force

Stored temperature

Weight

℃

stg

-40

140

W_t

270

Outline

KT33cT

www.china-liujing.com

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