KP1100A4300~5500V
Y65KPM
国标型 普通晶闸管 平板式
-
(
)
Chinese Type Phase Control Thyristors (Capsule Version)
Liujing rectifier co., Ltd.
FEATURES
1). Center amplifying gate
2). Metal case with ceramic insulator
3). Low on-state and switching losses
TYPICAL APPLICATIONS
IT(AV)
1300A
1). AC controllers
VDRM/VRRM 4300~5500V
2). DC and AC motor control
3). Controlled rectifiers
ITSM
I2t
17 KA
1445 103A2S
THE MAIN PARAMETERS
VALUE
℃
SYMBOL
IT(AV)
CHARACTERISTIC
TEST CONDITIONS
Tj(
)
UNIT
A
Min Type Max
O
℃
℃
Ths=55
1300
1100
180 half sine wave 50Hz
Double side cooled,
Mean on-state current
125
Ths=71
VDRM
VRRM
Repetitive peak off-state voltage
Repetitive peak reverse voltage
VDRM&VRRM,tp=10ms
DSM&VRSM= VDRM&VRRM+100V
5500
125 4300
125
V
V
IDRM
IRRM
Repetitive peak off-state current
Repetitive peak reverse current
VD= VDRM
VR= VRRM
120
17
mA
KA
ITSM
I2t
Surge on-state current
I2T for fusing coordination
Threshold voltage
10ms half sine wave
VR=0.6VRRM
125
1445 A2s*103
VTO
rT
1.30
V
125
Ω
m
On-state slop resistance
Peak on-state voltage
0.58
ITM=3220A, F=32KN
VDM=0.67VDRM
VTM
dv/dt
125
125
3.17
V
μ
Critical rate of rise of off-state voltage
1000 V/
s
s
VDM= 67%VDRM to2000A,
μ
di/dt
Critical rate of rise of on-state current
125
200
A/
μ
Gate pulse tr ≤0.5 s IGM=1.5A
Irm
trr
Reverse recovery current
Reverse recovery time
Recovery charge
250
21
A
μ
ITM=1000A,tp=1000 s,
μ
di/dt=-20A/ s,
μ
125
s
VR=50V
μ
Qrr
IGT
VGT
IH
2100
300
3.0
C
Gate trigger current
Gate trigger voltage
Holding current
40
mA
V
VA=12V, IA=1A
VDM=67%VDRM
25
0.8
20
250
mA
V
VGD
Non-trigger gate voltage
125
0.3
°
At 180 sine, double side cooled
Clamping force 32KN
Thermal resistance
Junction to heatsink
℃
/W
Rth(j-h)
0.017
Fm
Mounting force
Stored temperature
Weight
27
34
KN
℃
T
stg
-40
140
Wt
650
g
Size
Package box size
mm
×
×
160 145 65
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