Datasheet > KP11N60D

KP11N60D

更新时间： 2024-09-29 12:30:55

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KEC		/
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描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KP11N60D 数据手册

KP11N60D

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This Super Junction MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for active power factor

correction and switching mode power supplies.

DIM MILLIMETERS

6.60 + 0.20

6.10+0.20

5.34 + 0.30

0.70+0.20

2.70 + 0.15

FEATURES

2.30+0.10

0.96 MAX

0.90 MAX

· V_DSS=600V, I_D=11A

· Drain-Source ON Resistance :

R_DS(ON)(Max)=0.38Ω @V_GS=10V

· Qg(typ.)= 20nC

1.80+0.20

2.30+0.10

0.50 + 0.10

0.50+0.10

0.70 MIN

0.1 MAX

1. GATE

MAXIMUM RATING (Tc=25℃)

2. DRAIN

3. SOURCE

CHARACTERISTIC

SYMBOL

RATING

UNIT

V_DSS

V_GSS

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

600

±30

11*

DPAK (1)

I_D

Drain Current

@T_C=100℃

6.9*

24*

I_DP

Pulsed (Note1)

Single Pulsed Avalanche Energy

(Note 2)

E_AS

195

4.0

4.5

Repetitive Avalanche Energy

(Note 1)

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

69.4

0.56

W/℃

℃

Tc=25℃

Drain Power

Dissipation

P_D

Derate above 25℃

T_j

Maximum Junction Temperature

Storage Temperature Range

150

T_stg

-55∼ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

1.8

℃/W

Thermal Resistance,

Junction-to-Ambient

110

* : Drain current limited by maximum junction temperature.

PIN CONNECTION

2013. 5. 15

Revision No : 0

1/6

12 3 4 5 6

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