Datasheet > KMZ51

KMZ51

更新时间： 2024-01-10 19:50:46

品牌	Logo	应用领域
恩智浦 - NXP		传感器
页数	文件大小	规格书
8页	65K
描述
Magnetic field sensor

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技术参数
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KMZ51 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.81
JESD-609代码：	e4	安装特点：	SURFACE MOUNT
轴数：	1	端子数量：	8
最高工作温度：	125 °C	最低工作温度：	-40 °C
输出：	BRIDGE	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	SOP8,.25	封装形状/形式：	RECTANGULAR
电源：	5 V	子类别：	Other Sensors
表面贴装：	YES	端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
Base Number Matches：	1

KMZ51 数据手册

Philips Semiconductors

Product speciﬁcation

Magnetic ﬁeld sensor

KMZ51

FEATURES

PINNING

• High sensitivity

SYMBOL

DESCRIPTION

• Integrated compensation coil

• Integrated set/reset coil.

+I_ﬂip

V_CC

ﬂip coil

bridge supply voltage

ground

GND

+I_comp

−I_comp

−V_O

APPLICATIONS

compensation coil

bridge output voltage

ﬂip coil

• Navigation

• Current and earth magnetic field measurement

• Traffic detection.

+V_O

−I_ﬂip

DESCRIPTION

The KMZ51 is an extremely sensitive magnetic field

sensor, employing the magnetoresistive effect of thin-film

permalloy. The sensor contains one magnetoresistive

Wheatstone bridge and integrated compensation and

set/reset conductors. The integrated compensation

conductor allows magnetic field measurement with current

feedback loops to generate an output that is independent

of drift in sensitivity. With the integrated set/reset

conductor the orientation of sensitivity may be set or

changed (flipped). A short current pulse on this conductor

is needed to recover (set) the sensor after exposure to

strong disturbing magnetic fields. A negative current pulse

will reset the sensor to reversed sensitivity. By use of

periodically alternated flipping pulses and a lock-in

amplifier, output will become independent of sensor and

amplifier offset.

handbook, halfpage

ext

pin 1

index

MGD827

Fig.1 Simplified outline.

QUICK REFERENCE DATA

SYMBOL

V_CC

PARAMETER

bridge supply voltage

MIN.

TYP.

MAX.

UNIT

−

sensitivity (uncompensated)

−

mV ⁄ V

----------------

kA ⁄ m

V_offset

R_bridge

R_comp

A_comp

R_ﬂip

offset voltage

−1.5

−

+1.5

mV/V

kΩ

bridge resistance

compensation coil resistance

compensation coil ﬁeld factor; note 1

ﬂip coil resistance

100

170

300

Ω

A/m/mA

Ω

I_{ﬂip (min)}

t_{ﬂip (min)}

minimum recommended ﬂipping current; note 2

minimum ﬂip pulse duration; note 2

800

1000

1200

100

µs

Notes

1. Compensation conductor will generate a field H_comp= A _compI _compadditional to the external field H_ext

Sensor output will become zero if H_ext= −H _comp

2. Average power consumption in flip conductor, defined by current, pulse duration and pulse repetition rate may not

exceed the specified limit, see “Limiting values”.

1998 Mar 24

123 4 5 6 7 8

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