5秒后页面跳转
KM681000CLG-7LT PDF预览

KM681000CLG-7LT

更新时间: 2024-11-25 12:58:31
品牌 Logo 应用领域
三星 - SAMSUNG 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
10页 191K
描述
Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32

KM681000CLG-7LT 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:0.525 INCH, PLASTIC, SOP-32针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.37
最长访问时间:70 nsJESD-30 代码:R-PDSO-G32
长度:20.47 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:3 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:11.43 mmBase Number Matches:1

KM681000CLG-7LT 数据手册

 浏览型号KM681000CLG-7LT的Datasheet PDF文件第2页浏览型号KM681000CLG-7LT的Datasheet PDF文件第3页浏览型号KM681000CLG-7LT的Datasheet PDF文件第4页浏览型号KM681000CLG-7LT的Datasheet PDF文件第5页浏览型号KM681000CLG-7LT的Datasheet PDF文件第6页浏览型号KM681000CLG-7LT的Datasheet PDF文件第7页 
PRELIMINARY  
KM681000C Family  
CMOS SRAM  
Document Title  
128K x8 bit Low Power CMOS Static RAM  
Revision History  
Revision No.  
History  
Draft Date  
Remark  
0.0  
Initial draft  
November 22, 1995  
April 15, 1996  
Design target  
Preliminary  
0.1  
1.0  
2.0  
First revision  
- Seperate read and write at ICC, ICC1  
ICC = ICC1 ® Read : 15mA, Write : 35mA  
Finalized  
September 5, 1996  
November 5, 1997  
Final  
Final  
- Add 70ns speed bin for commercial product and 85ns speed  
bin for industrial.  
Revised  
- Improved operating current  
Add typical value.  
ICC Read : 15mA ® 10mA(Remove write current)  
ICC2 : 90mA ® 60mA  
- Speed bin change  
Remove 45ns from commercial part  
Remove 55ns and 100ns from industrial part.  
The attached data sheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 2.0  
1
November 1997  

与KM681000CLG-7LT相关器件

型号 品牌 获取价格 描述 数据表
KM681000CLGI-7 SAMSUNG

获取价格

128K x8 bit Low Power CMOS Static RAM
KM681000CLGI-7L SAMSUNG

获取价格

128K x8 bit Low Power CMOS Static RAM
KM681000CLI SAMSUNG

获取价格

128K x8 bit Low Power CMOS Static RAM
KM681000CLI-L SAMSUNG

获取价格

128K x8 bit Low Power CMOS Static RAM
KM681000CL-L SAMSUNG

获取价格

128K x8 bit Low Power CMOS Static RAM
KM681000CL-LG-5L-L SAMSUNG

获取价格

Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, SOP-32
KM681000CL-LG-7L-L SAMSUNG

获取价格

Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, SOP-32
KM681000CL-LP-45L-L SAMSUNG

获取价格

Standard SRAM, 128KX8, 45ns, CMOS, PDIP32, DIP-32
KM681000CL-LP-5L-L SAMSUNG

获取价格

Standard SRAM, 128KX8, 55ns, CMOS, PDIP32, DIP-32
KM681000CL-LP-7L-L SAMSUNG

获取价格

Standard SRAM, 128KX8, 70ns, CMOS, PDIP32, DIP-32