Datasheet > 存储 > DRAM> KM416S1021C

KM416S1021C

更新时间： 2024-01-04 04:24:40

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
8页	82K
描述
512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface

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KM416S1021C 数据手册

Preliminary

KM416S1021C

CMOS SDRAM

512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface

FEATURES

GENERAL DESCRIPTION

• JEDEC standard 3.3V power supply

• SSTL_3 (Class II) compatible with multiplexed address

• Dual banks operation

The KM416S1021C is 16,777,216 bits synchronous high data

rate Dynamic RAM organized as 2 x 524,288 words by 16 bits,

fabricated with SAMSUNG¢s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock I/O transactions are possible on every clock

cycle. Range of operating frequencies, programmable burst

length and programmable latencies allow the same device to be

useful for a variety of high bandwidth, high performance mem-

ory system applications.

• MRS cycle with address key programs

- CAS latency (2 & 3)

- Burst length (1, 2, 4, 8 & Full page)

- Burst type (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation

• DQM for masking

ORDERING INFORMATION

• Auto & self refresh

Part No.

Max Freq.

Interface Package

SSTL_3 54

• 64ms refresh period (4K cycle)

KM416S1021CT-G7

143MHz

KM416S1021CT-GS 100MHz(CL=2)

KM416S1021CT-G8 125MHz

(Class II) TSOP(II)

* KM416S1021CT-GS : CL=2 only

FUNCTIONAL BLOCK DIAGRAM

LWE

Data Input Register

LDQM

Bank Select

512K x 16

DQi

CLK

ADD

Column Decoder

Latency & Burst Length

LCKE

Programming Register

LWCBR

LRAS

LCBR

LWE

LCAS

LDQM

Timing Register

CLK

CKE

RAS

CAS

L(U)DQM

Samsung Electronics reserves the right to

change products or specification without

notice.

REV. 1. May '98

12 3 4 5 6 7 8

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与KM416S1021C相关器件

型号	品牌	获取价格	描述	数据表
KM416S1021CT-G7	SAMSUNG	获取价格	512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
KM416S1021CT-G8	SAMSUNG	获取价格	512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
KM416S1021CT-GS	SAMSUNG	获取价格	512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
KM416S1120D	SAMSUNG	获取价格	512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-F7	SAMSUNG	获取价格	Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
KM416S1120DT-F8	SAMSUNG	获取价格	Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
KM416S1120DT-G/F10	SAMSUNG	获取价格	512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F6	SAMSUNG	获取价格	512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F7	SAMSUNG	获取价格	512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F8	SAMSUNG	获取价格	512K x 16bit x 2 Banks Synchronous DRAM LVTTL