Datasheet > KK1000-28

KK1000-28

更新时间： 2024-03-03 10:08:33

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
3页	234K
描述
T8C

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KK1000-28 数据手册

Jiangsu Yangjie Runau Semiconductor Co., Ltd

ELECTRICAL CHARACTERISTICS AND RATINGS

KK1000-Fast Switching Thyristor

Gating

Parameter

Symbol

P_GM

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

Average gate power dissipation

Gate trigger current

P_G(AV)

I_GT

200

3.0

150

2.5

V_D=12V;R_L=3ohms;T_j=+25^oC

Gate trigger voltage

V_GT

0.70

Min.

Peak negative voltage

V_GRM

Dynamic

Parameter

Symbol

t_d

Max.

3.0

Typ.

2.5

Units

Conditions

I_TM=50A; V_D=67%V_DRM

Gate pulse:V_G=30V; R_G=10ohms;

t_r=0.1s; t_p=20s

Delay time

s

I_TM=1000 A; di/dt =- 10A/s;

V_R=50 V; dV/dt=30V/s ;

V_D= 67%V_DRM;T_j=125^oC

Turn-off time (V_R=-5V)

Reverse recovery current

t_q

s

I_TM=1000 A;di/dt=-10A/s;

V_R=50 V; Tj=125 ^oC

Q_rr

C

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

T_j

Min.

-40

Max.

+125

+140

0.022

0.005

Typ.

Units

^oC

Conditions

Operating temperature

Storage temperature

T_stg

^oC

Thermal resistance-junction to

case

R_{Θ (j-c)}

R_{Θ (c-s)}

^oC/W

Double sided cooled

Thermal resistance - case to

heatsink

Mounting force

Weight

0.46

kg.

* Mounting surfaces smooth, flat and greased

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