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KBP210GB-G PDF预览

KBP210GB-G

更新时间: 2024-01-02 17:11:24
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
3页 73K
描述
Bridge Rectifier Diode,

KBP210GB-G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:PLASTIC, KBP, 4 PIN
针数:4Reach Compliance Code:unknown
风险等级:5.43Base Number Matches:1

KBP210GB-G 数据手册

 浏览型号KBP210GB-G的Datasheet PDF文件第2页浏览型号KBP210GB-G的Datasheet PDF文件第3页 
Glass Passivated Bridge Rectifiers  
KBP2005G-G Thru. KBP210G-G  
Reverse Voltage: 50 to 1000V  
Forward Current: 2.0 Amp  
RoHS Device  
KBP  
Features  
0.118(3.0)*45°  
0.500(12.70)  
0.460(11.68)  
0.600(15.24)  
0.560(14.22)  
-Surge overload rating -60 amperes peak.  
-Ideal for printed circuit board.  
0.460(11.68)  
0.420(10.67)  
-High case dielectric strength.  
+
0.500  
MIN.  
Mechanical Data  
0.640  
MIN.  
(12.70)  
(16.25)  
-Case: Molded plastic body over passivated junctions.  
0.160(4.10)  
0.140(3.60)  
-Epoxy: UL 94V-0 rate flame retardant.  
0.07  
MAX.  
(1.80)  
0.034(0.86)  
0.028(0.76)  
-Polarity: Polarity symbols marked on case.  
-Mounting position: Any  
0.200(5.08)  
0.180(4.57)  
0.053(1.35)  
0.045(1.15)  
Dimensions in inches and (millimeter)  
Maximum ratings and electrical characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
KBP  
KBP  
KBP  
KBP  
KBP  
KBP  
KBP  
Symbol  
Parameter  
Unit  
2005G-G 201G-G 202G-G 204G-G 206G-G 208G-G 210G-G  
Maximum Reverse Peak Repetitive Voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
V
Maximum RMS Bridge Input Voltage  
Maximum DC Blocking Voltage  
V
DC  
100  
1000  
Maximum Average Forward Rectified  
Output Current at TA = 50°C  
I
(AV)  
2.0  
60  
A
A
Peak Forward Surage Current ,  
8.3ms Single Half Sine-Wave  
Super Imposed On Rated Load  
IFSM  
Maximum Forward Voltage Drop  
Per Bridge Element at 2.0A Peak  
1.1  
10.0  
1.0  
V
F
V
Maximum Reverse Current at Rated  
DC Blocking Voltage Per Element  
μA  
IR  
Maximum Reverse Current at Rated  
DC Blocking Voltage Per Element @TJ=100°C  
mA  
IR  
Operating Temperature Range  
Storage Temperature Range  
T
J
-55 to +150  
-55 to +150  
°C  
°C  
TSTG  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:B  
Page 1  
QW-BBR83  
Comchip Technology CO., LTD.  

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