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KBL08-E4 PDF预览

KBL08-E4

更新时间: 2024-09-28 19:30:39
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 98K
描述
DIODE 4 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBL, 4 PIN, Bridge Rectifier Diode

KBL08-E4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSIP-W4
针数:4Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.09
其他特性:UL RECOGNIZED最小击穿电压:800 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PSIP-W4
JESD-609代码:e4最大非重复峰值正向电流:200 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-50 °C最大输出电流:4 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:800 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子面层:Silver (Ag)端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

KBL08-E4 数据手册

 浏览型号KBL08-E4的Datasheet PDF文件第2页浏览型号KBL08-E4的Datasheet PDF文件第3页浏览型号KBL08-E4的Datasheet PDF文件第4页 
KBL005 thru KBL10  
Vishay General Semiconductor  
Single-Phase Bridge Rectifier  
FEATURES  
• UL recognition file number E54214  
• Ideal for printed circuit boards  
• High surge current capability  
• High case dielectric strength of 1500 V  
• Solder dip 260 °C, 40 s  
e4  
RMS  
~
~
~
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
~
Case Style KBL  
TYPICAL APPLICATIONS  
General purpose use in ac-to-dc bridge full wave  
rectification for monitor, TV, printer, SMPS, adapter,  
audio equipment, and home appliances applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
4 A  
MECHANICAL DATA  
Case: KBL  
VRRM  
IFSM  
IR  
50 V to 1000 V  
200 A  
Epoxy meets UL 94V-0 flammability rating  
5 µA  
Terminals: Silver plated leads, solderable per  
J-STD-002 and JESD22-B102  
VF  
1.1 V  
E4 suffix for consumer grade  
TJ max.  
150 °C  
Polarity: As marked on body  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL KBL005 KBL01 KBL02 KBL04 KBL06 KBL08 KBL10 UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
4.0  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward current at TA = 50 °C  
100  
1000  
IF(AV)  
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
200  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 50 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS SYMBOL KBL005 KBL01 KBL02 KBL04 KBL06 KBL08 KBL10 UNIT  
Maximum instantaneous  
forward drop per diode  
4.0 A  
VF  
1.1  
V
Maximum DC reverse  
current at rated DC  
blocking voltage per diode  
T
T
A = 25 °C  
A = 125 °C  
5.0  
1.0  
µA  
mA  
IR  
Document Number: 88655  
Revision: 15-Apr-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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