生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | VFBGA, | 针数: | 64 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.1.A |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.73 |
最长访问时间: | 100 ns | 其他特性: | TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE |
启动块: | TOP | JESD-30 代码: | R-PBGA-B64 |
内存密度: | 536870912 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 64 | 字数: | 33554432 words |
字数代码: | 32000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 32MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
编程电压: | 1.8 V | 座面最大高度: | 1 mm |
最大供电电压 (Vsup): | 1.95 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | BALL | 端子节距: | 0.5 mm |
端子位置: | BOTTOM | 类型: | NOR TYPE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K8S1215ETC-SC1F0 | SAMSUNG |
获取价格 |
Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64 | |
K8S1215ETC-SE1CT | SAMSUNG |
获取价格 |
EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64, | |
K8S1215ETC-SE1D0 | SAMSUNG |
获取价格 |
Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64 | |
K8S1215ETC-SE1E0 | SAMSUNG |
获取价格 |
Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64 | |
K8S1215EZC-DC1CT | SAMSUNG |
获取价格 |
EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64, | |
K8S1215EZC-DC1F0 | SAMSUNG |
获取价格 |
Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64 | |
K8S1215EZC-DE1C0 | SAMSUNG |
获取价格 |
Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64 | |
K8S1215EZC-DE1D0 | SAMSUNG |
获取价格 |
Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64 | |
K8S1215EZC-DE1DT | SAMSUNG |
获取价格 |
EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64, | |
K8S1215EZC-FC1DT | SAMSUNG |
获取价格 |
EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64, |