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K8S1115EBC-FE1FT PDF预览

K8S1115EBC-FE1FT

更新时间: 2024-10-01 10:25:15
品牌 Logo 应用领域
三星 - SAMSUNG 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路闪存
页数 文件大小 规格书
83页 1511K
描述
EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64,

K8S1115EBC-FE1FT 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:FBGA, BGA64,10X14,20
Reach Compliance Code:compliant风险等级:5.92
最长访问时间:95 ns启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PBGA-B64
内存密度:536870912 bit内存集成电路类型:EEPROM CARD
内存宽度:16湿度敏感等级:1
部门数/规模:4,511端子数量:64
字数:33554432 words字数代码:32000000
最高工作温度:85 °C最低工作温度:-25 °C
组织:32MX16封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA64,10X14,20
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:1.8 V编程电压:2.7 V
认证状态:Not Qualified就绪/忙碌:YES
部门规模:16K,64K最大待机电流:0.00003 A
子类别:Flash Memories最大压摆率:0.07 mA
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.5 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE

K8S1115EBC-FE1FT 数据手册

 浏览型号K8S1115EBC-FE1FT的Datasheet PDF文件第2页浏览型号K8S1115EBC-FE1FT的Datasheet PDF文件第3页浏览型号K8S1115EBC-FE1FT的Datasheet PDF文件第4页浏览型号K8S1115EBC-FE1FT的Datasheet PDF文件第5页浏览型号K8S1115EBC-FE1FT的Datasheet PDF文件第6页浏览型号K8S1115EBC-FE1FT的Datasheet PDF文件第7页 
Rev. 1.1, Sep. 2010  
K8S1215ETC  
K8S1215EBC  
K8S1215EZC  
512Mb C-die NOR FLASH  
9x11, 64FBGA, 32M x16, Muxed Burst, Multi Bank SLC  
1.7V ~ 1.95V  
datasheet  
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND  
SPECIFICATIONS WITHOUT NOTICE.  
Products and specifications discussed herein are for reference purposes only. All information discussed  
herein is provided on an "AS IS" basis, without warranties of any kind.  
This document and all information discussed herein remain the sole and exclusive property of Samsung  
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property  
right is granted by one party to the other party under this document, by implication, estoppel or other-  
wise.  
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or  
similar applications where product failure could result in loss of life or personal or physical harm, or any  
military or defense application, or any governmental procurement to which special terms or provisions  
may apply.  
For updates or additional information about Samsung products, contact your nearest Samsung office.  
All brand names, trademarks and registered trademarks belong to their respective owners.  
2010 Samsung Electronics Co., Ltd. All rights reserved.  
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与K8S1115EBC-FE1FT相关器件

型号 品牌 获取价格 描述 数据表
K8S1115EBC-SC1E0 SAMSUNG

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Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64
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Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64
K8S1115EBC-SE1E0 SAMSUNG

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Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64
K8S1115EBC-SE1F0 SAMSUNG

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Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64
K8S1115ETC-DC1E0 SAMSUNG

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Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64
K8S1115ETC-DC1ET SAMSUNG

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EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64
K8S1115ETC-DC1F0 SAMSUNG

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Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64
K8S1115ETC-DC1FT SAMSUNG

获取价格

EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64
K8S1115ETC-DE1C0 SAMSUNG

获取价格

Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64
K8S1115ETC-DE1E0 SAMSUNG

获取价格

Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64