Datasheet > K8C5615ETM-FC1D

K8C5615ETM-FC1D

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
54页	1187K
描述
Flash, 16MX16, 100ns, PBGA167,

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K8C5615ETM-FC1D 数据手册

K8C56(57)15ET(B)M

Document Title

NOR FLASH MEMORY

256M Bit (16M x16) Sync Burst , Multi Bank MLC NOR Flash Memory

Revision History

Revision No. History

Draft Date

Remark

0.0

0.5

0.6

Initial

April 1, 2005

Advance

Preliminary

September 1, 2005

November 7, 2005

Preliminary

- Added Burst Access time(11ns@66Mhz, 9ns@83Mhz)

- Correct the Active Write Current (typ.15mA, max.30mA --> typ.25mA,

max.40mA)

- Correct tBDH(Data Hold Time from Next Clock Cycle) from

4ns(@66MHz), 2.25ns(@108MHz), 1.5ns(@133MHz) to

3ns(@66MHz), 2ns(@108MHz), 2ns(@133MHz)

- Correct tRDYA(Clock to RDY Setup Time) from 8ns(@83Mhz) to

9ns(@83MHz)

- Correct tRDYS(RDY setup to Clock) from 4ns(@66MHz),

2.25ns(@108MHz), 1.5ns(@133MHz) to 3ns(@66MHz),

2ns(@108MHz), 2ns(@133MHz)

- Correct typo

0.7

- Add Ordering Information for Density

December 7, 2005

Preliminary

56 : 256Mb for 66/83MHz, 57 : 267Mb for 108/133Mhz

- Add Product Classification Table (Table 1-1)

- Change tAVDH(AVD Hold Time from CLK) from 6ns(@66MHz),

5ns(@83MHz) to 2ns(@66/83MHz)

- Delete tOH(Output Hold Time from Address, CE or OE ) from Asynchronous

Read parameter

- CFI note is added (Max Operation frequency : Data 53H is in 66/83Mhz

part

0.8

1.0

1.1

April 04,2006

- tAVDO is deleted

- Specification is finalized

April 25,2006

Active Asynchronous read Current(@1Mhz) is changed

3mA(typ.),5mA(max.) to 8mA(typ.), 10mA(max.)

September 08,2006

'In erase/program suspend followed by resume operation, min. 200ns is

needed for checking the busy status' is added

Frequency information is added to Programmable Wait State at Burst

Mode Configuration Register Table.

"Asynchronous mode may not support read following four sequential invalid

read condition within 200ns." is added

Correct typo

1.2

October 17, 2006

In write buffer programming part, "And from the third cycle to the last cycle

of Write to Buffer command is also required when using Write-Buffer-Pro-

gramming features in Unlock Bypass mode." is added.

Revision 1.2

October 2006

- 2 -

123 4 5 6 7...54

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与K8C5615ETM-FC1D相关器件

型号	品牌	描述	获取价格	数据表
K8C5615ETM-FC1D0	SAMSUNG	Flash, 16MX16, 100ns, PBGA167, 10.50 X 14 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FBGA-167	获取价格
K8C5615ETM-FC1E0	SAMSUNG	Flash, 16MX16, 100ns, PBGA167, 10.50 X 14 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FBGA-167	获取价格
K8C5615ETM-FC1F	SAMSUNG	Flash, 16MX16, 100ns, PBGA167,	获取价格
K8C5615ETM-FE1C	SAMSUNG	Flash, 16MX16, 100ns, PBGA167,	获取价格
K8C5615ETM-FE1D	SAMSUNG	Flash, 16MX16, 100ns, PBGA167,	获取价格
K8C5715EBM-DC1D0	SAMSUNG	Flash, 16MX16, 100ns, PBGA167, 10.50 X 14 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FB	获取价格