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K7N323601M-FC13 PDF预览

K7N323601M-FC13

更新时间: 2024-02-17 01:14:15
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
24页 277K
描述
1Mx36 & 2Mx18 Pipelined NtRAM

K7N323601M-FC13 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:LBGA,
针数:165Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.91最长访问时间:4.2 ns
其他特性:PIPELINED ARCHITECTUREJESD-30 代码:R-PBGA-B165
JESD-609代码:e0长度:17 mm
内存密度:37748736 bit内存集成电路类型:ZBT SRAM
内存宽度:36功能数量:1
端子数量:165字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX36封装主体材料:PLASTIC/EPOXY
封装代码:LBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.4 mm
最大供电电压 (Vsup):3.465 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
宽度:15 mmBase Number Matches:1

K7N323601M-FC13 数据手册

 浏览型号K7N323601M-FC13的Datasheet PDF文件第2页浏览型号K7N323601M-FC13的Datasheet PDF文件第3页浏览型号K7N323601M-FC13的Datasheet PDF文件第4页浏览型号K7N323601M-FC13的Datasheet PDF文件第5页浏览型号K7N323601M-FC13的Datasheet PDF文件第6页浏览型号K7N323601M-FC13的Datasheet PDF文件第7页 
K7N323645M  
K7N321845M  
1Mx36 & 2Mx18 Pipelined NtRAMTM  
Document Title  
1Mx36 & 2Mx18-Bit Pipelined NtRAMTM  
Revision History  
Draft Date  
Remark  
Rev. No.  
History  
Preliminary  
Preliminary  
Preliminary  
May. 10. 2001  
Aug. 29. 2001  
Dec. 31. 2001  
0.0  
1. Initial document.  
1. Add 165FBGA package  
0.1  
0.2  
1.Update JTAG scan order  
2. Speed bin merge.  
From K7N3236(18)49M to K7N3236(18)45M  
3. AC parameter change.  
tOH(min)/tLZC(min) from 0.8 to 1.5 at -25  
tOH(min)/tLZC(min) from 1.0 to 1.5 at -22  
tOH(min)/tLZC(min) from 1.0 to 1.5 at -20  
Preliminary  
Preliminary  
Feb. 14. 2002  
Apr. 20. 2002  
0.3  
0.4  
1. Change pin out for 165FBGA  
- x18/x36 ; 11B => from A to NC  
, 2R ==> from NC to A  
1. Insert pin at JTAG scan order of 165FBGA in connection with  
pin out change  
- x18/x36 ; insert Pin ID of 2R to BIT number of 69  
Preliminary  
Final  
May. 10. 2002  
Sep. 26. 2002  
Oct. 17, 2003  
0.5  
1.0  
1.1  
1. Add Icc, Isb, Isb1 and Isb2 values.  
1. Final datasheet release.  
Final  
1. Change the Stand-by current (Isb)  
Before  
Isb - 25 : 120  
After  
170  
160  
150  
140  
140  
140  
110  
100  
- 22 : 110  
- 20 : 100  
- 16 :  
- 15 :  
90  
90  
90  
- 13 :  
Isb1  
Isb2  
:
:
90  
80  
Final  
Nov. 18, 2003  
2.0  
1. Delete the 119BGA package  
2. Delete the 225MHz and 150MHz speed bin  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Nov. 2003  
Rev 2.0  
- 1 -  

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