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K7N321801M-QC22 PDF预览

K7N321801M-QC22

更新时间: 2024-02-03 02:25:10
品牌 Logo 应用领域
三星 - SAMSUNG 时钟静态存储器内存集成电路
页数 文件大小 规格书
28页 721K
描述
ZBT SRAM, 2MX18, 2.8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

K7N321801M-QC22 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFP包装说明:LQFP, QFP100,.63X.87
针数:100Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.89最长访问时间:2.8 ns
其他特性:PIPELINED ARCHITECTURE最大时钟频率 (fCLK):225 MHz
I/O 类型:COMMONJESD-30 代码:R-PQFP-G100
JESD-609代码:e0长度:20 mm
内存密度:37748736 bit内存集成电路类型:ZBT SRAM
内存宽度:18功能数量:1
端子数量:100字数:2097152 words
字数代码:2000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2MX18输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装等效代码:QFP100,.63X.87封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2.5/3.3,3.3 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.1 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.44 mA
最大供电电压 (Vsup):3.465 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:14 mm
Base Number Matches:1

K7N321801M-QC22 数据手册

 浏览型号K7N321801M-QC22的Datasheet PDF文件第2页浏览型号K7N321801M-QC22的Datasheet PDF文件第3页浏览型号K7N321801M-QC22的Datasheet PDF文件第4页浏览型号K7N321801M-QC22的Datasheet PDF文件第5页浏览型号K7N321801M-QC22的Datasheet PDF文件第6页浏览型号K7N321801M-QC22的Datasheet PDF文件第7页 
K7N323601M  
K7N321801M  
1Mx36 & 2Mx18 Pipelined NtRAMTM  
Document Title  
1Mx36 & 2Mx18-Bit Pipelined NtRAMTM  
Revision History  
Draft Date  
Rev. No.  
History  
Remark  
May. 10. 2001  
Aug. 29. 2001  
Dec. 31. 2001  
0.0  
0.1  
0.2  
1. Initial document.  
1. Add 165FBGA package  
1. Update JTAG scan order  
Preliminary  
Preliminary  
Preliminary  
2. Speed bin merge.  
From K7N3236(18)09M to K7N3236(18)01M  
3. AC parameter change.  
tOH(min)/tLZC(min) from 0.8 to 1.5 at -25  
tOH(min)/tLZC(min) from 1.0 to 1.5 at -22  
tOH(min)/tLZC(min) from 1.0 to 1.5 at -20  
1. Change pin out for 165FBGA  
Feb. 14. 2002  
Apr. 20. 2002  
0.3  
0.4  
Preliminary  
Preliminary  
- x18/x36 ; 11B => from A to NC  
, 2R ==> from NC to A  
1. Insert pin at JTAG scan order of 165FBGA in connection with  
pin out change  
- x18/x36 ; insert Pin ID of 2R to BIT number of 69  
1. Add Icc, Isb, Isb1 and Isb2 values.  
1. Final datasheet release.  
May. 10. 2002  
Sep. 26. 2002  
0.5  
1.0  
Preliminary  
Final  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
Sep 2002  
Rev 1.0  

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