Datasheet > K7N163601A-HC13

K7N163601A-HC13

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
28页	621K
描述
ZBT SRAM, 512KX36, 4.2ns, CMOS, PBGA119, BGA-119

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K7N163601A-HC13 数据手册

K7N163601A

K7N163201A

K7N161801A

512Kx36/32 & 1Mx18 Pipelined NtRAM^TM

PIN CONFIGURATION(TOP VIEW)

A10

N.C.

VDDQ

VSSQ

N.C.

DQb8

DQb7

VSSQ

VDDQ

DQb6

DQb5

VDD

N.C.

VDDQ

VSSQ

N.C.

DQa0

DQa1

DQa2

VSSQ

VDDQ

DQa3

DQa4

VSS

100 Pin TQFP

(20mm x 14mm)

VDD

VSS

DQa5

DQa6

VDDQ

VSSQ

DQa7

DQa8

N.C.

VSSQ

VDDQ

N.C.

DQb4

DQb3

VDDQ

VSSQ

DQb2

DQb1

DQb0

N.C.

VSSQ

VDDQ

N.C.

K7N161801A(1Mx18)

PIN NAME

SYMBOL

PIN NAME

TQFP PIN NO.

SYMBOL

PIN NAME

TQFP PIN NO.

A0 - A19

Address Inputs

32,33,34,35,36,37,44 VDD

45,46,47,48,49,50,80 VSS

81,82,83,84,99,100

Power Supply(+3.3V) 14,15,16,41,65,66,91

Ground

17,40,67,90

ADV

Address Advance/Load

Read/Write Control Input 88

Clock

Clock Enable

Chip Select

No Connect

1,2,3,6,7,25,28,29,30,

38,39,42,43,51,52,53,

56,57,75,78,79,95,96

N.C.

CLK

CKE

CS1

CS2

Data Inputs/Outputs 58,59,62,63,68,69,72,73,74

Data Inputs/Outputs 8,9,12,13,18,19,22,23,24

DQa0~a8

DQb0~b8

BWx(x=a,b) Byte Write Inputs

93,94

Output Enable

Power Sleep Mode

Burst Mode Control

Output Power Supply 4,11,20,27,54,61,70,77

(3.3V or 2.5V)

VDDQ

VSSQ

LBO

Output Ground

5,10,21,26,55,60,71,76

NOTE : A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.

- 5 -

May 2002

Rev 2.0

1 2 3 456 7 8...28

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