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K7B203625A-TC75 PDF预览

K7B203625A-TC75

更新时间: 2024-10-02 19:31:07
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
16页 438K
描述
Cache SRAM, 64KX36, 7.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

K7B203625A-TC75 技术参数

生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.83
最长访问时间:7.5 ns其他特性:SELF-TIMED WRITE CYCLE
JESD-30 代码:R-PQFP-G100长度:20 mm
内存密度:2359296 bit内存集成电路类型:CACHE SRAM
内存宽度:36功能数量:1
端子数量:100字数:65536 words
字数代码:64000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64KX36封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.6 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD宽度:14 mm
Base Number Matches:1

K7B203625A-TC75 数据手册

 浏览型号K7B203625A-TC75的Datasheet PDF文件第2页浏览型号K7B203625A-TC75的Datasheet PDF文件第3页浏览型号K7B203625A-TC75的Datasheet PDF文件第4页浏览型号K7B203625A-TC75的Datasheet PDF文件第5页浏览型号K7B203625A-TC75的Datasheet PDF文件第6页浏览型号K7B203625A-TC75的Datasheet PDF文件第7页 
K7B203625A  
64Kx36 Synchronous SRAM  
Document Title  
64Kx36-Bit Synchronous Burst SRAM  
Revision History  
History  
Remark  
Rev. No.  
Draft Date  
Initial draft  
Preliminary  
Preliminary  
0.0  
July. 03. 1998  
Sep. 14. 1998  
Change DC Characteristics.  
0.1  
ICC value from 320mA to 250mA at -7.  
ICC value from 300mA to 230mA at -8.  
ICC value from 280mA to 200mA at -9.  
ISB value from 90mA to 70mA at -7.  
ISB value from 80mA to 60mA at -8.  
ISB value from 70mA to 50mA at -9.  
ISB1 value from 30mA to 20mA  
ISB2 value from 30mA to 20mA  
Final spec release.  
Fianl  
Final  
Final  
1.0  
2.0  
3.0  
Nov. 16. 1998  
Dec. 02. 1998  
Dec. 17. 1998  
Add VDDQ Supply voltage( 2.5V )  
Min tOH Parameter Change : from 2.0ns to 3.0ns  
Min tLZC Parameter Change : from 0ns to 3ns  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
December 1998  
Rev 3.0  

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