Datasheet > K6R4016V1B-JP12

K6R4016V1B-JP12

更新时间： 2024-10-02 10:20:35

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
9页	203K
描述
Standard SRAM, 256KX16, 12ns, CMOS, PDSO44

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K6R4016V1B-JP12 数据手册

PRELIMPreliminaryPPPPPPPPPINARY

CMOS SRAM

K6R4016V1B-C/B-L, K6R4016V1B-I/B-P

Document Title

256Kx16 Bit High Speed Static RAM(3.3V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Revision History

Rev No.

Rev. 0.0

Rev. 1.0

History

Remark

Draft Data

Initial release with Design Target.

Design Target

Preliminary

Jan. 1st, 1997

Jun. 1st, 1997

Release to Preliminary Data Sheet.

1.1. Replace Design Target to Preliminary.

Rev. 2.0

Release to Final Data Sheet.

2.1. Delete Preliminary.

Final

Feb.11th.1998

2.2. Add 30pF capacitive in test load.

2.3. Relax DC characteristics.

Item

Current

250mA

245mA

240mA

50mA

ICC

10ns

12ns

15ns

f=max.

f=0

VDR=3.0V

240mA

230mA

220mA

40mA

10 / 1mA

0.9mA

ISB

ISB1

IDR

10 / 1.2mA

1.0mA

Rev. 2.1

Change operating current at Industrial Temperature range.

Final

Jun. 27th 1998

Previous spec.

(10/12/15ns part)

250/245/240mA

Changed spec.

(10/12/15ns part)

275/270/265mA

Items

ICC

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev 2.1

June 1998

- 1 -

12 3 4 5 6 7...9

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