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K6R4016C1C-FC20T PDF预览

K6R4016C1C-FC20T

更新时间: 2024-10-02 06:07:19
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
11页 259K
描述
Standard SRAM, 256KX16, 20ns, CMOS, PBGA48

K6R4016C1C-FC20T 数据手册

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PRELIMPreliminaryPPPPPPPPPINARY  
Preliminary  
CMOS SRAM  
K6R4016C1C-C, K6R4016C1C-I  
Document Title  
256Kx16 Bit High Speed Static RAM(5V Operating).  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
RevNo.  
Rev. 0.0  
Rev. 1.0  
History  
Draft Data  
Remark  
Initial release with Preliminary.  
Feb. 12. 1999  
Mar. 29. 1999  
Preliminary  
Preliminary  
1.1 Removed Low power Version.  
1.2 Removed Data Retention Characteristics  
1.3 Changed ISB1 to 20mA  
Rev.2.0  
2.1 Relax D.C parameters.  
Aug. 19. 1999  
Preliminary  
Item  
Previous  
Current  
200mA  
195mA  
190mA  
12ns  
15ns  
20ns  
190mA  
185mA  
180mA  
ICC  
2.2 Relax Absolute Maximum Rating.  
Item  
Previous  
Current  
Voltage on Any Pin Relative to Vss  
-0.5 to 7.0  
-0.5 to Vcc+0.5  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 2.0  
August 1999  
- 1 -  

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暂无描述
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