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K6R4016C1C-FE100 PDF预览

K6R4016C1C-FE100

更新时间: 2024-10-01 15:36:07
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
11页 184K
描述
Standard SRAM, 256KX16, 10ns, CMOS, PBGA48

K6R4016C1C-FE100 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FBGA, BGA48,6X8,30Reach Compliance Code:unknown
风险等级:5.92最长访问时间:10 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:16湿度敏感等级:3
端子数量:48字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-25 °C
组织:256KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:FBGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:5 V
认证状态:Not Qualified最大待机电流:0.01 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.2 mA标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

K6R4016C1C-FE100 数据手册

 浏览型号K6R4016C1C-FE100的Datasheet PDF文件第2页浏览型号K6R4016C1C-FE100的Datasheet PDF文件第3页浏览型号K6R4016C1C-FE100的Datasheet PDF文件第4页浏览型号K6R4016C1C-FE100的Datasheet PDF文件第5页浏览型号K6R4016C1C-FE100的Datasheet PDF文件第6页浏览型号K6R4016C1C-FE100的Datasheet PDF文件第7页 
PRELIMPreliminaryPPPPPPPPPINARY  
CMOS SRAM  
K6R4016C1C-C, K6R4016C1C-E, K6R4016C1C-I  
Document Title  
256Kx16 Bit High Speed Static RAM(5V Operating).  
Operated at Extended and Industrial Temperature Ranges.  
Revision History  
RevNo.  
Rev. 0.0  
Rev. 1.0  
History  
Draft Data  
Remark  
Initial release with Preliminary.  
Feb. 12. 1999  
Mar. 29. 1999  
Preliminary  
Preliminary  
1.1 Removed Low power Version.  
1.2 Removed Data Retention Characteristics  
1.3 Changed ISB1 to 20mA  
Rev. 2.0  
2.1 Relax D.C parameters.  
Aug. 19. 1999  
Preliminary  
Item  
Previous  
Current  
200mA  
195mA  
190mA  
12ns  
15ns  
20ns  
190mA  
185mA  
180mA  
ICC  
2.2 Relax Absolute Maximum Rating.  
Item  
Previous  
Current  
Voltage on Any Pin Relative to Vss  
-0.5 to 7.0  
-0.5 to Vcc+0.5  
3.1 Delete Preliminary  
Rev.3.0  
Mar. 27. 2000  
Final  
3.2 Update D.C parameters and 10ns part.  
Previous  
Current  
ICC  
-
200mA  
195mA  
190mA  
Isb  
Isb1  
ICC  
Isb  
Isb1  
10ns  
12ns  
15ns  
20ns  
185mA  
175mA  
165mA  
160mA  
70mA  
20mA  
60mA  
10mA  
3.3 Added Extended temperature range  
Delete 20ns speed bin  
Rev.4.0  
Sep. 24. 2001  
Final  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 4.0  
September 2001  
- 1 -  

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