是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TSOP2 | 包装说明: | TSOP2, TSOP44,.46,32 |
针数: | 44 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.84 | Is Samacsys: | N |
最长访问时间: | 10 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PDSO-G44 | JESD-609代码: | e0 |
长度: | 18.41 mm | 内存密度: | 4194304 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 44 |
字数: | 524288 words | 字数代码: | 512000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 512KX8 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP2 | 封装等效代码: | TSOP44,.46,32 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 3.3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大待机电流: | 0.005 A |
最小待机电流: | 3 V | 子类别: | SRAMs |
最大压摆率: | 0.065 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子节距: | 0.8 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 10.16 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
K6R4008V1D-UI10 | SAMSUNG |
完全替代 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial T | |
CY7C1049DV33-10ZSXI | CYPRESS |
功能相似 |
4-Mbit (512K x 8) Static RAM | |
IS61LV5128AL-10TLI | ISSI |
功能相似 |
512K x 8 HIGH-SPEED CMOS STATIC RAM |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K6R4008V1D-TC100 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 | |
K6R4008V1D-TI08 | SAMSUNG |
获取价格 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial T | |
K6R4008V1D-TI080 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 8ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 | |
K6R4008V1D-TI10 | SAMSUNG |
获取价格 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial T | |
K6R4008V1D-TI100 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 | |
K6R4008V1D-UC08 | SAMSUNG |
获取价格 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial T | |
K6R4008V1D-UC080 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 8ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-44 | |
K6R4008V1D-UC10 | SAMSUNG |
获取价格 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial T | |
K6R4008V1D-UC100 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-44 | |
K6R4008V1D-UI08 | SAMSUNG |
获取价格 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial T |