Datasheet > K6R4008V1B-JL10T

K6R4008V1B-JL10T

更新时间： 2024-10-01 07:47:51

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
10页	214K
描述
Standard SRAM, 512KX8, 10ns, CMOS, PDSO36

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K6R4008V1B-JL10T 数据手册

PRELIMINARY

CMOS SRAM

K6R4008V1B-C/B-L, K6R4008V1B-I/B-P

Document Title

512Kx8 Bit High Speed Static RAM(3.3V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Revision History

RevNo.

Rev. 0.0

Rev. 1.0

History

Draft Data

Remark

Initial release with Design Target.

Jan. 1st, 1997

Jun. 1st, 1997

Design Target

Preliminary

Release to Preliminary Data Sheet.

1.1. Replace Design Target to Preliminary.

Rev. 2.0

Release to Final Data Sheet.

2.1. Delete Preliminary.

Feb.11th.1998

Final

2.2. Add 30pF capacitive in test load.

2.3. Relax DC characteristics.

Item

Current

205mA

200mA

195mA

50mA

ICC

10ns

12ns

15ns

f=max.

f=0

VDR=3.0V

170mA

160mA

150mA

40mA

10 / 1mA

0.9mA

ISB

ISB1

IDR

10 / 1.2mA

1.0mA

Rev. 2.1

Rev. 2.2

Change operating current at Industrial Temperature range.

Jun.27th 1998

May. 4th 1999

Final

Previous spec.

(10/12/15ns part)

205/200/195mA

Changed spec.

(10/12/15ns part)

230/225/220mA

Items

Icc

Add 44 pins plastic TSOP(II) forward Package.

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev 2.2

May 1999

- 1 -

12 3 4 5 6 7...10

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