Datasheet > K4S283233E-DN600

K4S283233E-DN600

更新时间： 2023-02-26 13:31:25

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
10页	81K
描述
Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90

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K4S283233E-DN600 数据手册

K4S283233E-S(D)E/N/G/C/L/F

Mobile-SDRAM

1M x 32Bit x 4 Banks SDRAM in 90FBGA

FEATURES

GENERAL DESCRIPTION

The K4S283233E is 134,217,728 bits synchronous high data

rate Dynamic RAM organized as 4 x 1,048,576 words by 32

bits, fabricated with SAMSUNG¢s high performance CMOS

technology. Synchronous design allows precise cycle control

with the use of system clock and I/O transactions are possible

on every clock cycle. Range of operating frequencies, program-

mable burst lengths and programmable latencies allow the

same device to be useful for a variety of high bandwidth and

high performance memory system applications.

• 3.0V & 3.3V power supply

• LVCMOS compatible with multiplexed address

• Four banks operation

• MRS cycle with address key programs

-. CAS latency (1, 2 & 3)

-. Burst length (1, 2, 4, 8 & Full page)

-. Burst type (Sequential & Interleave)

• EMRS cycle with address key programs.

-. PASR(Partial Array Self Refresh)

-. Internal TCSR(Temperature Compensated Self Refresh)

• All inputs are sampled at the positive going edge of the system

clock

ORDERING INFORMATION

Part No.

Max Freq.

Interface Package

• Burst read single-bit write operation

• DQM for masking

K4S283233E-S(D)E/N/G/C/L/F60 166MHz(CL=3)

133MHz(CL=3)

K4S283233E-S(D)E/N/G/C/L/F75

105MHz(CL=2)

90FBGA

• Auto & self refresh

LVCMOS

• 64ms refresh period (4K cycle).

K4S283233E-S(D)E/N/G/C/L/F1H 105MHz(CL=2)

(Pb Free)

• Extended Temperature Operation (-25°C ~ 85°C).

• Commercial Temperature Operation (-25°C ~ 70°C).

• 90Balls Monolithic FBGA(11mm x 13mm)

• Pb for -SXXX, Pb Free for -DXXX.

K4S283233E-S(D)E/N/G/C/L/F1L

105MHz(CL=3)

- S(D)E/N/G : Normal/Low Power, Extended Temperature.

- S(D)C/L/F : Normal/Low Power, Commercial Temperature.

Note :

1. In case of 40MHz Frequency, CL1 can be supported.

FUNCTIONAL BLOCK DIAGRAM

LWE

Data Input Register

LDQM

Bank Select

1M x 32

DQi

CLK

ADD

Column Decoder

Latency & Burst Length

LCKE

Programming Register

LWCBR

LRAS

LCBR

LWE

LCAS

LDQM

Timing Register

CLK

CKE

RAS

CAS

DQM

* Samsung Electronics reserves the right to change products or specification without notice.

May. 2003

12 3 4 5 6 7...10

中文翻译

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与K4S283233E-DN600相关器件

型号	品牌	获取价格	描述	数据表
K4S283233E-FC1L0	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90
K4S283233E-FE1L0	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90
K4S283233E-FE600	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90
K4S283233E-FF1H0	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90
K4S283233E-FF1L0	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90
K4S283233E-FG1L0	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90
K4S283233E-FL750	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90
K4S283233E-FN1H0	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90
K4S283233E-FN1L0	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90
K4S283233E-FN600	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90

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