是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FBGA, BGA54,9X9,32 | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 最长访问时间: | 7 ns |
最大时钟频率 (fCLK): | 105 MHz | I/O 类型: | COMMON |
交错的突发长度: | 1,2,4,8 | JESD-30 代码: | S-PBGA-B54 |
内存密度: | 536870912 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 16 | 湿度敏感等级: | 3 |
端子数量: | 54 | 字数: | 33554432 words |
字数代码: | 32000000 | 最高工作温度: | 70 °C |
最低工作温度: | -25 °C | 组织: | 32MX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA54,9X9,32 |
封装形状: | SQUARE | 封装形式: | GRID ARRAY, FINE PITCH |
电源: | 1.8/2.5,2.5 V | 认证状态: | Not Qualified |
刷新周期: | 8192 | 连续突发长度: | 1,2,4,8,FP |
最大待机电流: | 0.0015 A | 子类别: | DRAMs |
最大压摆率: | 0.28 mA | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4M51163LE-PL800 | SAMSUNG |
获取价格 |
Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 | |
K4M51163LE-YC | SAMSUNG |
获取价格 |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
K4M51163LE-YC1H | SAMSUNG |
获取价格 |
Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54 | |
K4M51163LE-YC1L | SAMSUNG |
获取价格 |
Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54 | |
K4M51163LE-YC800 | SAMSUNG |
获取价格 |
Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, 0.80 MM PITCH, FBGA-54 | |
K4M51163LE-YF1H | SAMSUNG |
获取价格 |
Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54 | |
K4M51163LE-YF1L | SAMSUNG |
获取价格 |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
K4M51163LE-YF1L0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, FBGA-54 | |
K4M51163LE-YF80 | SAMSUNG |
获取价格 |
Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54 | |
K4M51163LE-YL | SAMSUNG |
获取价格 |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |