Datasheet > K4F640812D-TP600

K4F640812D-TP600

更新时间： 2024-09-24 09:38:51

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
20页	171K
描述
Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32

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K4F640812D-TP600 数据手册

Industrial Temperature

K4F660812D,K4F640812D

CMOS DRAM

8M x 8bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION

This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells

within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are

optional features of this family. All of this family have CAS -before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Fur-

thermore, Self-refresh operation is available in L-version. This 8Mx8 Fast Page Mode DRAM family is fabricated using Samsung¢s

advanced CMOS process to realize high band-width, low power consumption and high reliability.

FEATURES

• Fast Page Mode operation

• Part Identification

- K4F660812D-JI/P(3.3V, 8K Ref., SOJ)

- K4F640812D-JI/P(3.3V, 4K Ref., SOJ)

- K4F660812D-TI/P(3.3V, 8K Ref., TSOP)

- K4F640812D-TI/P(3.3V, 4K Ref., TSOP)

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Self-refresh capability (L-ver only)

• Fast parallel test mode capability

• LVTTL(3.3V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Active Power Dissipation

Unit :mW

• Available in Plastic SOJ and TSOP(II) packages

• +3.3V ±0.3V power supply

Speed

-45

324

288

252

432

396

360

• Industrial Temperature operating ( -40~85°C )

-50

-60

• Refresh Cycles

FUNCTIONAL BLOCK DIAGRAM

Part

NO.

Refresh

cycle

Refresh time

Normal

64ms

L-ver

K4F660812D*

K4F640812D

RAS

CAS

Vcc

Vss

128ms

Control

Clocks

VBB Generator

* Access mode & RAS only refresh mode

: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)

CAS -before-RAS & Hidden refresh mode

: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)

Row Decoder

Refresh Timer

Refresh Control

Data in

Buffer

Memory Array

8,388,608 x 8

Cells

DQ0

Refresh Counter

Row Address Buffer

Col. Address Buffer

• Performance Range

DQ7

Speed

-45

Data out

Buffer

tRAC

45ns

50ns

60ns

tCAC

12ns

13ns

15ns

tRC

tPC

A0~A12

(A0~A11)*1

80ns

90ns

110ns

31ns

35ns

40ns

A0~A9

(A0~A10)*1

Column Decoder

-50

-60

Note) *1 : 4K Refresh

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...20

中文翻译

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与K4F640812D-TP600相关器件

型号	品牌	获取价格	描述	数据表
K4F640812E-JC50T	SAMSUNG	获取价格	Fast Page DRAM, 8MX8, 50ns, CMOS, PDSO32,
K4F640812E-JC600	SAMSUNG	获取价格	Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32,
K4F640812E-JL50T	SAMSUNG	获取价格	Fast Page DRAM, 8MX8, 50ns, CMOS, PDSO32,
K4F640812E-JL600	SAMSUNG	获取价格	Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32,
K4F640812E-TC50T	SAMSUNG	获取价格	Fast Page DRAM, 8MX8, 50ns, CMOS, PDSO32,
K4F640812E-TC600	SAMSUNG	获取价格	Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32,
K4F640812E-TL50T	SAMSUNG	获取价格	Fast Page DRAM, 8MX8, 50ns, CMOS, PDSO32,
K4F640812E-TL60T	SAMSUNG	获取价格	Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32,
K4F641612B	SAMSUNG	获取价格	4M x 16bit CMOS Dynamic RAM with Fast Page Mode
K4F641612B-L	SAMSUNG	获取价格	4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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