是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TSOP2 | 包装说明: | TSOP2, |
针数: | 32 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.02 |
风险等级: | 5.92 | Is Samacsys: | N |
访问模式: | FAST PAGE WITH EDO | 最长访问时间: | 65 ns |
其他特性: | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | JESD-30 代码: | R-PDSO-G32 |
长度: | 20.95 mm | 内存密度: | 67108864 bit |
内存集成电路类型: | EDO DRAM | 内存宽度: | 8 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 32 | 字数: | 8388608 words |
字数代码: | 8000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 8MX8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP2 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 峰值回流温度(摄氏度): | 240 |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
自我刷新: | YES | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 宽度: | 10.16 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4E660812C | SAMSUNG |
获取价格 |
8M x 8bit CMOS Dynamic RAM with Extended Data Out | |
K4E660812C-JC450 | SAMSUNG |
获取价格 |
EDO DRAM, 8MX8, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | |
K4E660812C-JC50 | SAMSUNG |
获取价格 |
EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | |
K4E660812C-JL45 | SAMSUNG |
获取价格 |
EDO DRAM, 8MX8, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | |
K4E660812C-TC45 | SAMSUNG |
获取价格 |
EDO DRAM, 8MX8, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 | |
K4E660812C-TC50 | SAMSUNG |
获取价格 |
EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 | |
K4E660812C-TC600 | SAMSUNG |
获取价格 |
EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 | |
K4E660812C-TL450 | SAMSUNG |
获取价格 |
暂无描述 | |
K4E660812C-TL50 | SAMSUNG |
获取价格 |
EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 | |
K4E660812C-TL600 | SAMSUNG |
获取价格 |
EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 |