5秒后页面跳转
K3P5V1000F-GC12 PDF预览

K3P5V1000F-GC12

更新时间: 2024-01-17 22:48:02
品牌 Logo 应用领域
三星 - SAMSUNG 有原始数据的样本ROM光电二极管内存集成电路
页数 文件大小 规格书
4页 66K
描述
MASK ROM, 1MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44

K3P5V1000F-GC12 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP44,.63
针数:44Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.92最长访问时间:120 ns
备用内存宽度:8JESD-30 代码:R-PDSO-G44
JESD-609代码:e0长度:28.5 mm
内存密度:16777216 bit内存集成电路类型:MASK ROM
内存宽度:16功能数量:1
端子数量:44字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX16封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP44,.63
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:3.3 V认证状态:Not Qualified
座面最大高度:3.1 mm最大待机电流:0.00003 A
子类别:MASK ROMs最大压摆率:0.06 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:12.6 mm
Base Number Matches:1

K3P5V1000F-GC12 数据手册

 浏览型号K3P5V1000F-GC12的Datasheet PDF文件第2页浏览型号K3P5V1000F-GC12的Datasheet PDF文件第3页浏览型号K3P5V1000F-GC12的Datasheet PDF文件第4页 
K3P5V(U)1000F-D(G)C  
CMOS MASK ROM  
16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM  
FEATURES  
GENERAL DESCRIPTION  
· Switchable organization  
The K3P5V(U)1000F-D(G)C is a fully static mask programma-  
ble ROM fabricated using silicon gate CMOS process technol-  
ogy, and is organized either as 2,097,152 x 8 bit(byte mode) or  
as 1,048,576 x 16 bit(word mode) depending on BHE voltage  
level.(See mode selection table)  
2,097,152 x 8(byte mode)  
1,048,576 x 16(word mode)  
· Fast access time  
Random Access Time/Page Access Time  
3.3V Operation : 100/30ns(Max.)@CL=50pF,  
120/40ns(Max.)@CL=100pF  
3.0V Operation : 120/40ns(Max.)@CL=100pF  
4 Words / 8 Bytes page access  
· Supply voltage : single +3.0V/ single +3.3V  
· Current consumption  
This device includes page read mode function, page read mode  
allows 4 words (or 8 bytes) of data to read fast in the same  
page, CE and A3 ~ A19 should not be changed.  
This device operates with 3.0V or 3.3V power supply, and all  
inputs and outputs are TTL compatible.  
Operating : 60mA(Max.)  
Standby : 30mA(Max.)  
· Fully static operation  
· All inputs and outputs TTL compatible  
· Three state outputs  
· Package  
-. K3P5V(U)1000F-DC : 42-DIP-600  
-. K3P5V(U)1000F-GC : 44-SOP-600  
Because of its asynchronous operation, it requires no external  
clock assuring extremely easy operation.  
It is suitable for use in program memory of microprocessor, and  
data memory, character generator.  
The K3P5V(U)1000F-DC is packaged in a 42-DIP and the  
K3P5V(U)1000F-GC in a 44-SOP.  
FUNCTIONAL BLOCK DIAGRAM  
PIN CONFIGURATION  
1
2
A18  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
A19  
A8  
N.C  
A18  
N.C  
A19  
A8  
1
2
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
A19  
X
MEMORY CELL  
MATRIX  
(1,048,576x16/  
2,097,152x8)  
A17  
A7  
BUFFERS  
AND  
DECODER  
.
.
.
.
.
.
.
.
3
A9  
A17  
A7  
3
4
A6  
A5  
A10  
A11  
4
A9  
5
A6  
A5  
A4  
A3  
A10  
A11  
A12  
5
6
A4  
A12  
6
7
A3  
A13  
A14  
A15  
A16  
7
8
A2  
Y
8
A13  
A14  
A15  
SENSE AMP.  
9
A1  
BUFFERS  
AND  
DECODER  
A2  
A1  
9
10  
11  
12  
13  
14  
15  
16  
A0  
10  
11  
DATA OUT  
BUFFERS  
CE  
VSS  
OE  
Q0  
Q8  
Q1  
BHE  
VSS  
A0  
A16  
A2  
DIP  
SOP  
CE 12  
BHE  
VSS  
A0~A1  
A-1  
Q15/A-1  
VSS  
13  
Q7  
OE  
Q0  
Q8  
Q1  
Q9  
14  
15  
16  
17  
18  
19  
Q15/A-1  
Q7  
.
.
.
Q14  
Q6  
29 Q14  
28 Q6  
CE  
Q9 17  
Q13  
Q5  
Q0/Q8  
Q7/Q15  
CONTROL  
LOGIC  
18  
Q2  
OE  
Q13  
Q5  
27  
26  
25  
24  
23  
19  
Q10  
Q12  
Q4  
Q2  
BHE  
20  
21  
Q3  
Q10 20  
Q12  
Q4  
Q11  
VCC  
Q3  
21  
22  
Pin Name  
A0 - A1  
Pin Function  
Q11  
VCC  
Page Address Inputs  
Address Inputs  
K3P5V(U)1000F-DC  
A2 - A19  
Q0 - Q14  
K3P5V(U)1000F-GC  
Data Outputs  
Output 15(Word mode)/  
LSB Address(Byte mode)  
Q15 /A-1  
BHE  
CE  
Word/Byte selection  
Chip Enable  
Output Enable  
Power  
OE  
VCC  
VSS  
N.C  
Ground  
No Connection  

与K3P5V1000F-GC12相关器件

型号 品牌 获取价格 描述 数据表
K3P5V1000F-GC120 SAMSUNG

获取价格

MASK ROM, 1MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44
K3P5V1000F-TC10 SAMSUNG

获取价格

MASK ROM, 1MX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K3P5V1000F-TC100 SAMSUNG

获取价格

MASK ROM, 1MX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K3P5V1000F-TC120 SAMSUNG

获取价格

MASK ROM, 1MX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K3P5V2000D-SC SAMSUNG

获取价格

MASK ROM
K3P5V2000D-SC10 SAMSUNG

获取价格

MASK ROM, 512KX32, 100ns, CMOS, PDSO70, 0.500 INCH, SSOP-70
K3P6C1000B-GC10 SAMSUNG

获取价格

MASK ROM, 2MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44
K3P6C1000B-GC100 SAMSUNG

获取价格

MASK ROM, 2MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44
K3P6C1000B-GC12 SAMSUNG

获取价格

MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44
K3P6C1000B-GC15 SAMSUNG

获取价格

MASK ROM, 2MX16, 150ns, CMOS, PDSO44, 0.600 INCH, SOP-44