D
S
TO-254
G
2N7228 500 Volt 0.415Ω
JX2N7228*
JV2N7228*
TM
POWER MOS IV
*QUALIFIED TO MIL-S-19500/592 31/7/92
JEDEC REGISTERED N -CHANNEL HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
2N7228
500
±20
12
UNIT
VDSS
VGS
Drain-Source Voltage
Volts
Gate-Source Voltage
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
ID
8
d
Amps
Watts
1
IDM
IAR
Pulsed Drain Current
48
12
1
Avalanche Current
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 100°C
Linear Derating Factor
150
PD
60
1.2
W/K
mJ
EAS
EAR
Single Pulse Avalanche Energy
750
Repetitive Avalanche Energy
15
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
UNIT
MIN
TYP
MAX
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
valanche Rated
Volts
VGS(TH)
Gate Threshold Voltage (VDS = VGS, ID = 250µA)
2
4
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V)
25
IDSS
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
250
±100
IGSS
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
nA
2
ID(ON)
On State Drain Current (VDS > ID(ON) x RDS(ON) Max, VGS = 10V)
Amps
12
2
Drain-Source On-State Resistance (VGS = 10V, ID = 8.0A)
0.415
0.900
0.515
2
Ohms
Drain-Source On-State Resistance (VGS = 10V, ID = 8.0A, TC = 125°C)
RDS(ON)
2
Drain-Source On-State Resistance (VGS = 10V, ID = 12.0A)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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