JX040K
JieJie Microelectronics CO. , Ltd.
FIG.1 Maximum power dissipation versus
FIG.2: RMS on-state current versus case
RMS on-state current
P(W)
temperature
I
T(RMS)(A)
4.5
4
8
7
6
5
4
3
2
1
0
93℃
3.5
3
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
0
25
50
75
100
125
I
T(RMS)(A)
TC(℃)
FIG.3: RMS on-state current versus ambient
temperature (printed circuit board
FIG.4: Surge peak on-state current versus
number of cycles
FR4,copper thickness:35μm)(full cycle)
ITSM(A)
IT(RMS)(A)
45
40
35
30
25
20
15
10
5
1.2
1
T =25℃,tp=10ms,one cycle,half‐sine
c
0.8
0.6
0.4
0.2
0
0
0
25
50
75
100
125
1.E+0
1.E+1
1.E+2
1.E+3
1.E+4
1.E+5
Ta(℃)
Number of cycles
FIG.5: On-state characteristics
FIG.6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp<10ms, and corresponding value of I2t
(dI/dt<50A/μs)
ITSM(A), I2t(A2s)
ITM(A)
100
10
1
Tj=25℃ typ
Tj=25℃ max
Tj=125℃ typ
1000
100
10
ITSM
dI/dt
I2t
0.1
1
0
0.5
1
1.5
VTM(V)
2
2.5
3
0.01
0.1
1
10
tp(ms)
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