JX012U
JieJie Microelectronics Co., Ltd.
FIG.1 Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS)(A)
1.4
P(W)
2.5
40℃
1.2
2
1.5
1
1
0.8
0.6
0.4
0.2
0
0.5
0
0
0.25
0.5
0.75
T(RMS)(A)
1
1.25
1.5
0
22
44
66
88
110
TC(℃)
I
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics
number of cycles
ITM(A)
ITSM(A)
25
10
Tj=25℃ typ
Tj=25℃ max
Tj=110℃ typ
Tc=25℃,tp=10ms,one cycle,half‐sine
20
15
10
5
1
0.1
0
0
0.5
1
1.5
VTM(V)
2
2.5
3
1.E+0
1.E+1
1.E+2
1.E+3
1.E+4
1.E+5
Number of cycles
FIG.5: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp<10ms, and corresponding value of I2t
(dI/dt<100A/μs)
FIG.6: Relative variations of gate
triggercurrent, holding current and latching
current versus junction temperature
ITSM(A), I2t(A2s)
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
2.5
IGT
1000
IL&IH
2
ITSM
dI/dt
1.5
1
100
10
1
0.5
0
I2t
0.01
0.1
1
10
‐40
‐20
0
20
40
60
80
100
120
Tj(℃)
tp(ms)
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