Datasheet > JX013W

JX013W

更新时间： 2024-11-21 14:55:47

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
10页	1140K
描述
门极灵敏型单向可控硅

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中文翻译

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数据手册

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JX013W 数据手册

JIEJIE MICROELECTRONICS CO., LTD.

JX013W 1A Sensitive SCR

Rev.A.1.0

DESCRIPTION:

The JX013W SCR provides high dV/dt rate

with strong resistance to electromagnetic

interface. It is especially recommended for

use on residual current circuit breaker, straight

hair, igniter etc. Package SOT-223-2L is RoHS

compliant.

MAIN FEATURES

Symbol

Value

Unit

I_T(RMS)

V_DRM/V_RRM

I_GT

1200

≤200

μA

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

T_stg

Value

-40-150

-40-110

1200

0.6

Unit

℃

Storage junction temperature range

Operating junction temperature range

T_j

Repetitive peak off-state voltage (T_j=25℃)

Repetitive peak reverse voltage (T_j=25℃)

Average on-state current (T_C≤74℃)

RMS on-state current (T_C≤74℃)

V_DRM

V_RRM

I_T(AV)

I_T(RMS)

Non repetitive surge peak on-state current

(t_p=10ms , T_j=25℃)

Non repetitive surge peak on-state current

(t_p=8.3ms , T_j=25℃)

I_TSM

1.4

100

I²t value for fusing (t_p=10ms , T_j=25℃)

I²t

A²s

Critical rate of rise of on-state current

(I_G=2×I_GT, f=100Hz , T_j=110℃)

dI/dt

A/μs

Peak gate current (t_p=20μs, T_j=110℃)

Average gate power dissipation (T_j=110℃)

Peak gate power

I_GM

P_G(AV)

P_GM

0.1

TEL：+86-513-68528666

http://www.jjwdz.com

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中文翻译

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