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JSTB02B-PASK-1 PDF预览

JSTB02B-PASK-1

更新时间: 2024-01-01 11:34:39
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
17页 844K
描述
Optimized for Silicon Carbide (SiC) MOSFET Modules

JSTB02B-PASK-1 数据手册

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62mm  
62EM1 Programmable  
Electrical Series  
PRELIMINARY  
Electrical Characteristics  
Conditions: VSUP = +15.0 V, VIN_LOGIC  
= 15V or 5V, MOSFET = CAS300M12BM2  
Power Supply  
Description  
Min  
Typ  
15  
Max  
Unit  
V
Supply Voltage  
VCC to GND  
Without Load  
With Load, Note 3  
14  
16  
Supply Current  
110  
mA  
mA  
V
Supply Current  
1250  
16.5  
UVLO Level-HI and LO*  
UVLO Level-HI and LO*  
Primary Side low voltage detect fault level  
13.5  
20  
14  
Secondary Side low voltage detect fault level,  
Note 3  
V
OVLO Level-HI and LO*  
Primary Side high voltage detect fault level  
2-Level Turn Off, Note 3  
DSAT 1st Level Turn Off Voltage, Note 3  
DSAT 2nd Level Turn Off Voltage, Note 3  
16  
1.5  
9
V
V
V
V
VSOFT  
*
VsoftD1*  
VsoftD2*  
5
Signal I/O  
Description  
Min  
Typ  
500  
Max  
Unit  
Input Impedance  
5V - HI and LO side input  
15V - HI and LO side input  
3000  
5V Differential HI and LO side input  
1000  
VIN Low  
VIN High  
5V - Turn-off threshold  
15V - Turn-off threshold  
5V Turn-on Threshold  
15V - Turn-on threshold  
Difference between VIN+ to VIN-  
Note 3  
1.25  
4
V
V
3.5  
10  
2
V
V
VIN (differential option)  
Gate Output Voltage Low  
Gate Output Voltage High  
Fault Output Voltage  
V
-6  
-4  
V
Note 3  
+17  
0.3  
+21  
V
Fault lines are open collect with 5mA load  
Note 4  
V
Fault Output Current  
10  
mA  
kHz  
Switching Frequency  
Note 2  
200  
DC Link & Temp Monitoring  
High Voltage (HV) & Temp Monitoring  
Output  
0
5
V
DC Link & Temp Monitoring  
DC Link & Temp Monitoring  
PWM Frequency  
Output Impedance  
31.5  
kHz  
510  
1%  
DC Link Voltage  
Temperature Trip  
880  
920  
V
125  
°C  
MOSFET Short Protection  
Desat Monitor Voltage*  
Description  
Between Drain and Sink of MOSFET, Note 3  
Activation after MOSFET Turn on  
Min  
Typ  
8.25  
1.5  
Max  
Unit  
V
μs  
TDSAT  
*
Response Time after Fault  
200  
ns  
Note 1: Input signal should not be activated until 20 ms after power is applied to allow on board DC-DC converter to stabilize.  
Note 2: Actual maximum switching speed is a function of gate capacitance.  
Note 3: SiC MOSFET dependant, conditions listed above assume CAS300M12BM2  
Note 4: Fault lines are open collector and require a pull-up resistor, 2KΩ recommended  
* Software configurable parameter  
62EM1 - 62mm Electrical Master 1 Spec Sheet V09  
Page 3 of 17  
 

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