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JSTE30P45A PDF预览

JSTE30P45A

更新时间: 2024-11-19 14:54:35
品牌 Logo 应用领域
捷捷微 - JJM 肖特基二极管
页数 文件大小 规格书
4页 764K
描述
肖特基二极管

JSTE30P45A 数据手册

 浏览型号JSTE30P45A的Datasheet PDF文件第2页浏览型号JSTE30P45A的Datasheet PDF文件第3页浏览型号JSTE30P45A的Datasheet PDF文件第4页 
JIEJIE MICROELECTRONICS CO., LTD.  
JSTE30P45A  
30A Schottky Barrier Rectifier  
Rev.1.1  
DESCRIPTION  
Trench MOS barrier schottky technology  
Low stored charge majority carrier conduction  
Ultra low forward voltage drop  
Low leakage current  
Low power loss and high efficiency  
High forward surge capacity  
TO-263  
Symbol  
MECHANICAL DATA  
Case: TO-263 molded plastic  
Terminals: Solder plated, solderable per J-STD-002  
ABSOLUTE MAXIMUM RATING (Rating at 25ambient temperature unless otherwise specified.)  
Parameter  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
Symbol  
VRRM  
VRMS  
VDC  
JSTE30P45A  
Unit  
V
45  
31.5  
45  
V
Maximum DC blocking voltage  
Average forward current  
V
IF(AV)  
30  
A
Peak forward surge current: 8.3ms single half  
sine-wave superimposed on rated load  
IFSM  
290  
A
Operating junction temperature range  
Storage temperature range  
Tj  
-55 to +150  
-55 to +150  
Tstg  
ELECTRICAL CHARACTERISTICS(Rating at 25ambient temperature unless otherwise specified.)  
Parameter  
Symbol  
Min.  
Typ.  
0.32  
0.45  
0.47  
0.49  
-
Max.  
Unit  
IF=0.5A, TA=25℃  
IF=15A, TA=25℃  
IF=20A, TA=25℃  
IF=30A, TA=25℃  
VR=45V, TA=25℃  
VR=45V, TA=125℃  
IF=3A, dI/dt=100A/μs  
VR=5VDC, f=1MHz  
-
-
-
-
-
-
-
-
-
-
Forward voltage  
Reverse current  
VF  
V
-
0.56  
100  
50  
30  
-
μA  
mA  
ns  
IR  
-
Reverse recovery time  
Junction capacitance  
trr  
-
CJ  
750  
pF  
TEL:+86-513-83639777  
-1 / 4-  
http://www.jjwdz.com  

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