Datasheet > JSW2-63DR

JSW2-63DR

更新时间： 2022-02-26 13:07:19

品牌	Logo	应用领域
MINI		光电二极管
页数	文件大小	规格书
6页	305K
描述
SPDT RF Switch

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JSW2-63DR 数据手册

JSW2-63DR+

SPDT RF Switch

50Ω

5 to 6000 MHz High Power 3W

The Big Deal

• Single Positive Supply Voltage

• High Power P0.1dB, 3W

• Low Insertion Loss, 0.33 dB at 1 GHz

CASE STYLE: MT1818

Product Overview

JSW2-63DR+ is a high-power reﬂective SPDT RF switch, with reﬂective short on output ports in the OFF

state. Made using a Silicon-on-Insulator process, it provides very high IP3 (55 dBm typ.). This switch also

has a built-in CMOS driver and negative voltage generator, all packaged in a tiny 2x2mm package, enabling

it to operate over wideband and ﬁt into tight spaces.

Key Features

Feature

Advantages

Wideband operation

5-6000 MHz

Enables a single component to be used in a vast array of applications from VHF up to

6 GHz.

Results in little or negligible inter-modulation generation, meeting requirements for digital

communication signals.

High IIP3: 55 dBm typ.

Low Loss, 0.33 dB at 1 GHz

& high input power, 3W

Low loss and high power capability enables a single switch to be used for a variety of

applications, saving inventory.

Operates with single positive supply voltage; no need for DC blocking capacitors, unless

external DC is present at the RF ports.

Built in negative voltage generator

Built-in CMOS driver

No need for external driver, saving PCB space and cost.

Tiny MCLP package

2 x 2mm, 12-lead

Provides low inductance, repeatable transitions, and excellent thermal contact to PCB.

Mini-Circuits

www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com

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