JST41T-800B
JieJie Microelectronics CO. , Ltd.
Peak pulse voltage
(Tj=25℃; non-repetitive,off-state;FIG.7)
Vpp
0.9
kV
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Symbol
Test Condition
Quadrant
Ⅰ-Ⅱ-Ⅲ
Ⅳ
Value
Unit
50
70
IGT
MAX.
mA
VD=12V RL=33Ω
VGT
VGD
ALL
MAX.
MIN.
1.3
0.2
V
V
VD=VDRM Tj=125℃
RL=3.3KΩ
ALL
Ⅰ-Ⅲ-Ⅳ
80
160
80
IL
MAX.
mA
IG=1.2IGT
Ⅱ
IH
IT=500mA
MAX.
MIN.
MIN.
mA
V/μs
V/μs
dV/dt
VD=540V Gate Open Tj=125℃
1200
20
(dV/dt)c (dI/dt)c=20A/ms, Tj=125℃
ton
10
IG=80mA IA=400mA IR=40mA
Tj=25℃
TYP.
μs
toff
70
STATIC CHARACTERISTICS
Symbol
VTM
Parameter
Tj=25℃
Value(MAX.)
Unit
V
ITM=60A tp=380μs
Threshold voltage
Dynamic resistance
1.4
0.73
10
5
VTO
Tj=125℃
Tj=125℃
Tj=25℃
V
RD
mΩ
μA
mA
IDRM
IRRM
VD=VDRM VR=VRRM
Tj=125℃
5
THERMAL RESISTANCES
Symbol
Parameter
junction to case (AC)
junction to ambient (AC)
Value
0.7
Unit
℃/W
℃/W
Rth(j-c)
Rth(j-a)
50
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