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JST55T-1200BW PDF预览

JST55T-1200BW

更新时间: 2024-11-06 14:56:03
品牌 Logo 应用领域
捷捷微 - JJM 可控硅
页数 文件大小 规格书
5页 227K
描述
双向可控硅

JST55T-1200BW 数据手册

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JIEJIE MICROELECTRONICS CO. , Ltd  
JIEJIE SEMICONDUCTOR CO.,Ltd  
JST55 Series  
JST55 Series 55A TRIACs  
Rev.4.2 July 12 2021  
DESCRIPTION:  
JST55 series triacs, with high ability to withstand the shock  
loading of large current, provide high dv/dt rate with strong  
resistance to electromagnetic interface. With high commutation  
performances, 3 quadrants products especially recommended  
for use on inductive load.  
MAIN FEATURES  
Symbol  
IT(RMS)  
Value  
Unit  
A
55  
2500  
VISO  
V
VDRM /VRRM  
600 and 800 and 1200 and 1600  
V
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
V
Storage temperature range  
Tstg  
Tj  
-40-150  
-40-125  
Operating junction temperature range  
Repetitive peak off-state voltage (Tj=25)  
Repetitive peak reverse voltage (Tj=25)  
Non repetitive surge peak off-state voltage  
Non repetitive peak reverse voltage  
VDRM  
VRRM  
VDSM  
VRSM  
IT(RMS)  
600 /800/1200/1600  
600 /800/1200/1600  
VDRM +100  
V
V
VRRM +100  
V
RMS on-state current  
TG-C (TC=90)  
55  
A
Non repetitive surge peak on-state current  
(full cycle, F=50Hz)  
I2t value for fusing (tP=10ms)  
ITSM  
I2t  
550  
1500  
100  
A
A2s  
A/μs  
Critical rate of rise of on-state current  
(IG =2×IGT)  
dI/dt  
Peak gate current  
IGM  
PG(AV)  
PGM  
8
2
A
W
W
V
Average gate power dissipation  
Peak gate power  
10  
Insulation voltage(A.C,F=50Hz,1min)  
VISO  
2500  
TEL:+86-513-83639777  
- 1 / 5-  
http://www.jjwdz.com  

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