Datasheet > JST55T-1200BW

JST55T-1200BW

更新时间： 2024-03-04 09:49:44

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
5页	227K
描述
双向可控硅

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JST55T-1200BW 数据手册

JIEJIE MICROELECTRONICS CO. , Ltd

JIEJIE SEMICONDUCTOR CO.,Ltd

JST55 Series

JST55 Series 55A TRIACs

Rev.4.2 July 12 2021

DESCRIPTION:

JST55 series triacs, with high ability to withstand the shock

loading of large current, provide high dv/dt rate with strong

resistance to electromagnetic interface. With high commutation

performances, 3 quadrants products especially recommended

for use on inductive load.

MAIN FEATURES

Symbol

I_T(RMS)

Value

Unit

2500

V_ISO

V_DRM/V_RRM

600 and 800 and 1200 and 1600

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

℃

Storage temperature range

T_stg

T_j

-40-150

-40-125

Operating junction temperature range

Repetitive peak off-state voltage (T_j=25℃)

Repetitive peak reverse voltage (T_j=25℃)

Non repetitive surge peak off-state voltage

Non repetitive peak reverse voltage

V_DRM

V_RRM

V_DSM

V_RSM

I_T(RMS)

600 /800/1200/1600

V_DRM+100

V_RRM+100

RMS on-state current

TG-C (T_C=90℃)

Non repetitive surge peak on-state current

(full cycle, F=50Hz)

I²t value for fusing (t_P=10ms)

I_TSM

I²t

550

1500

100

A²s

A/μs

Critical rate of rise of on-state current

(I_G=2×I_GT)

dI/dt

Peak gate current

I_GM

P_G(AV)

P_GM

Average gate power dissipation

Peak gate power

Insulation voltage(A.C,F=50Hz,1min)

V_ISO

2500

TEL：+86-513-83639777

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http://www.jjwdz.com

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