JST20A-1200CW
JieJie Microelectronics CO. , Ltd.
FIG.1 Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS)(A)
P(W)
35
25
30
25
20
15
10
5
75℃
20
15
10
5
0
0
0
4
8
12
16
20
24
0
25
50
75
100
125
I
T(RMS)(A)
TC(℃)
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics
number of cycles
ITSM(A)
ITM(A)
220
Tc=25℃,tp=20ms,one cycle,sine
Tj=25℃ typ
Tj=25℃ max
Tj=125℃ typ
200
100
10
1
180
160
140
120
100
80
60
40
20
0
0
0.5
1
1.5
VTM(V)
2
2.5
3
1.E+0
1.E+1
1.E+2
1.E+3
1.E+4
1.E+5
Number of cycles
FIG.5: Non-repetitive surge peak on-state current
FIG.6: Relative variations of gate trigger
current, holding current and latching
current versus junction temperature
for a sinusoidal pulse with width tp<20ms, and
corresponding value of I2t (dI/dt<100A/μs)
ITSM(A), I2t(A2s)
I
GT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
3
2.5
2
IGT(I/II)&IH
IGT(III)
IL
1000
ITSM
dI/dt
I2t
100
1.5
1
10
1
0.5
0
0.01
0.1
1
10
‐40
‐20
0
20
40
Tj(℃)
60
80
100
120
140
tp(ms)
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