JST16F-800TW
JieJie Microelectronics CO. , Ltd.
Average gate power dissipation (Tj=125℃)
PG(AV)
PGM
0.5
10
W
W
Peak gate power
Peak pulse voltage
(Tj=25℃; non-repetitive,off-state;FIG.7)
Vpp
3
kV
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Symbol
IGT
Test Condition
Quadrant
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
Value
Unit
mA
V
MAX.
MAX.
5
1
VD =12V RL =33Ω
VGT
VD =VDRM Tj =125℃
RL =3.3KΩ
VGD
Ⅰ-Ⅱ-Ⅲ
MIN.
0.2
V
Ⅰ-Ⅲ
15
20
15
80
1.5
3
IL
MAX.
mA
IG =1.2IGT
Ⅱ
IH
dV/dt
(dI/dt)c
ton
IT =500mA
MAX.
MIN.
MIN.
mA
V/μs
A/ms
VD=540V Gate Open Tj =125℃
(dV/dt)c=10V/μs Tj=125℃
IG=10mA IA=200mA IR=20mA
TYP.
μs
Tj=25℃
toff
25
STATIC CHARACTERISTICS
Symbol
Parameter
ITM =22.5A tp=380μs Tj=25℃
Value(MAX.)
Unit
V
VTM
VTO
RD
1.5
0.77
30
Threshold voltage
Dynamic resistance
Tj=125℃
Tj=125℃
Tj=25℃
V
mΩ
μA
mA
IDRM
IRRM
5
VD =VDRM VR =VRRM
Tj=125℃
0.5
THERMAL RESISTANCES
Symbol
Parameter
junction to case (AC)
junction to ambient (AC)
Value
2.3
Unit
℃/W
℃/W
Rth(j-c)
Rth(j-a)
60
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