JST08C-600BW
JieJie Microelectronics CO. , Ltd.
Peak pulse voltage
(Tj=25℃; non-repetitive,off-state;FIG.7)
Vpp
2.5
kV
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Symbol
IGT
Test Condition
Quadrant
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
Value
Unit
mA
V
MAX.
MAX.
50
1
VD =12V RL =33Ω
VGT
VD =VDRM Tj =125℃
RL =3.3KΩ
VGD
Ⅰ-Ⅱ-Ⅲ
MIN.
0.2
V
Ⅰ-Ⅲ
50
90
IL
MAX.
mA
IG =1.2IGT
Ⅱ
IH
IT =100mA
MAX.
MIN.
MIN.
50
mA
V/μs
A/ms
dV/dt
VD=400V Gate Open Tj =125℃
2000
12
(dI/dt)c (dV/dt)c=20V/μs, Tj=125℃
ton
5
IG=80mA IA=400mA IR=40mA
Tj=25℃
TYP.
μs
toff
50
STATIC CHARACTERISTICS
Symbol
VTM
Parameter
ITM =11A tp=380μs
Value(MAX.)
Unit
V
Tj=25℃
Tj=125℃
Tj=125℃
Tj=25℃
Tj=125℃
1.5
0.8
44
VTO
Threshold voltage
Dynamic resistance
V
RD
mΩ
μA
mA
IDRM
IRRM
5
VD =VDRM VR =VRRM
0.25
THERMAL RESISTANCES
Symbol
Parameter
junction to case (AC)
junction to ambient (AC)
Value
1.5
Unit
℃/W
℃/W
Rth(j-c)
Rth(j-a)
60
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