Datasheet > JST08E-800TW

JST08E-800TW

更新时间： 2024-03-12 21:01:42

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
10页	1006K
描述
三象限双向可控硅

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JST08E-800TW 数据手册

JIEJIE MICROELECTRONICS CO., LTD.

JST08E-800TW 8A TRIAC

Rev.A.1.0

DESCRIPTION:

The JST08E-800TW triac is suitable for general purpose AC

switching. It can be used as an ON/OFF function in

applications such as heating regulation, induction motor

starting circuits, for phase control operation in light

dimmers, motor speed controllers. JST08E-800TW

snubberless triac is especially recommended for use on

inductive loads. It can be driven directly through the MCU

I/O port. Package TO-263 is RoHS compliant.

MAIN FEATURES

Symbol

I_T(RMS)

Value

Unit

V_DRM/V_RRM

I_GT

800

5/5/5

Ⅰ Ⅱ Ⅲ

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

T_stg

Value

-40-150

-40-125

800

Unit

℃

Storage junction temperature range

Operating junction temperature range

Repetitive peak off-state voltage (T_j=25℃)

Repetitive peak reverse voltage (T_j=25℃)

RMS on-state current (T_C≤107℃)

T_j

V_DRM

V_RRM

I_T(RMS)

800

Non repetitive surge peak on-state current

(full cycle , t_p=20ms , T_j=25℃)

Non repetitive surge peak on-state current

(full cycle , t_p=16.6ms , T_j=25℃)

I_TSM

I²t value for fusing (t_p=10ms , T_j=25℃)

I²t

A²s

Critical rate of rise of on-state current

(I_G=2×I_GT, f=100Hz , T_j=125℃)

dI/dt

A/μs

Peak gate current (t_p=20μs , T_j=125℃)

Average gate power dissipation (T_j=125℃)

Peak gate power

I_GM

P_G(AV)

P_GM

0.5

TEL：+86-513-68528666

http://www.jjwdz.com

12 3 4 5 6 7...10

下载PDF

与JST08E-800TW相关器件

型号	品牌	描述	获取价格	数据表
JST08F-1200BW	JJM	三象限双向可控硅	获取价格
JST08F-1200CW	JJM	三象限双向可控硅	获取价格
JST08F-1200SW	JJM	三象限双向可控硅	获取价格
JST08F-1200TW	JJM	三象限双向可控硅	获取价格
JST08F-600B	JJM	四象限双向可控硅	获取价格
JST08F-600BW	JJM	三象限双向可控硅	获取价格