JST01U-800SW
JieJie Microelectronics CO. , Ltd.
FIG.1 Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS)(A)
P(W)
1.6
1.2
45℃
1.4
1.2
1
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
T(RMS)(A)
0.8
1
1.2
0
25
50
75
100
125
I
TC(℃)
FIG.3: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35μm)(full cycle)
FIG.4: Surge peak on-state current versus
number of cycles
ITM(A)
ITSM(A)
16
Tj=25℃ typ
Tj=25℃ max
Tj=125℃ typ
Tc=25℃,tp=20ms,one cycle,sine
14
10
12
10
8
1
6
4
2
0
0.1
1.E+0
1.E+1
1.E+2
1.E+3
1.E+4
1.E+5
0
0.5
1
1.5
VTM(V)
2
2.5
3
Number of cycles
FIG.5: On-state characteristics
FIG.6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp<20ms, and corresponding value of I2t
(dI/dt<100A/μs)
SHNCDJDFKVFKPJDFGPSDJFPAJFJOFJOJS
OPGJOPRJGJOSDHSDHHHSEHUISHFSUIH
ITSM(A), I2t(A2s)
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
3
IGT(I/II)&IH
IGT(III)
100
2.5
ITSM
IL
dI/dt
2
10
1.5
1
1
I2t
0.5
0
0.1
0.01
0.1
1
10
-40
-20
0
20
40
60
80
100
120
140
tp(ms)
Tj(℃)
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http://www.jjwdz.com
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