JEU12DFX for ESD Protection
JieJie Microelectronics Co., Ltd.
ELECTRICAL CHARACTERISTICS (TA=25℃)
Parameter
Symbol
VRWM
VBR
Conditions
Min
Typ Max Unit
Reverse working voltage
Reverse breakdown voltage
Reverse leakage current
Peak pulse current
12.0
16.5
0.1
V
V
IT=1mA
13.5
IR
VRWM=12V
μA
A
IPP
tP=8/20μs
30
IPP=1A, tP=8/20μs
IPP=10A, tP=8/20μs
IPP=30A, tP=8/20μs
VRWM=0V, f=1MHz
15.0
17.0
21.0
140
Clamping voltage
VC
CJ
V
Junction capacitance
pF
RATINGS AND V‐I CHARACTERISTICS CURVES (TA=25ºC, unless otherwise noted)
FIG.1:V- I curve characteristics
(Uni-directional)
FIG.2: Pulse waveform (8/20μs)
Percent of IPPM
front time: T1 = 1.25×T = 8×(1±20%)μs
time to half value: T2 = 20×(1±20%)μs
Peak value
I
100
90
IF
Half value
V
VC
VBR
VRWM
50
IR
VF
T2
IT
10
0
t(μs)
IPP
T
0
10
20
30
40
T1
FIG.3: Pulse derating curve
FIG.4: ESD clamping (30kV contact)
PPP derating in percentage(%)
100
Percent of IPPM
100
90
80
60
40
30ns
60ns
20
0
10
0
t(ns)
TJ(℃)
75 100
0
30
60
tr 0.7 to 1ns
0
25
50
125
150
175
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