JCT1655SJ
JieJie Microelectronics CO. , Ltd.
FIG.1 Maximum power dissipation versus
FIG.2: RMS on-state current versus case
RMS on-state current
temperature
IT(RMS)(A)
60
P(W)
120
74℃
50
100
80
60
40
20
0
40
30
20
10
0
0
11
22
33
44
55
66
0
25
50
75
100
125
IT(RMS)(A)
TC(℃)
V
FIG.3: Surge peak on-state current versus
number of cycles
FIG.4: On-state characteristics
I
TM(A)
I
TSM(A)
700
600
500
400
300
200
100
0
Tj=25℃ typ
Tj=25℃ max
Tj=125℃ typ
T =25℃,tp=10ms,one cycle,half‐sine
c
100
10
1
0
0.5
1
1.5
2
2.5
1.E+0
1.E+1
1.E+2
1.E+3
1.E+4
1.E+5
VTM(V)
Number of cycles
FIG.5: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp<10ms, and corresponding value of I2t
(dI/dt<200A/μs)
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
ITSM(A), I2t(A2s)
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
2.5
ITSM
IGT
I2t
IL&IH
2
dI/dt
1000
1.5
1
100
10
1
0.5
0
0.01
0.1
1
10
‐40
‐20
0
20
40
60
80
100
120
140
Tj(℃)
tp(ms)
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