是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DO-7 |
包装说明: | HERMETIC SEALED, GLASS PACKAGE-2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.09 |
Is Samacsys: | N | 其他特性: | HIGH RELIABILITY |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 1.2 V | JEDEC-95代码: | DO-7 |
JESD-30 代码: | E-LALF-W2 | JESD-609代码: | e0 |
最大非重复峰值正向电流: | 50 A | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最大输出电流: | 1 A | 封装主体材料: | GLASS |
封装形状: | ELLIPTICAL | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Qualified |
参考标准: | MIL-19500 | 最大重复峰值反向电压: | 800 V |
最大反向恢复时间: | 0.3 µs | 子类别: | Rectifier Diodes |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV1N5621US | SENSITRON |
获取价格 |
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2 | |
JANTXV1N5622 | MICROSEMI |
获取价格 |
MILITARY RECTIFIERS | |
JANTXV1N5622 | VMI |
获取价格 |
Rectifier Diode, 1 Element, 1.5A, 1000V V(RRM), Silicon, | |
JANTXV1N5622UL | SENSITRON |
获取价格 |
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2 | |
JANTXV1N5622US | MICROSEMI |
获取价格 |
Rectifier Diode, Avalanche, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS, D-5A, 2 PIN | |
JANTXV1N5623 | MICROSEMI |
获取价格 |
MILITARY RECTIFIERS | |
JANTXV1N5623 | SENSITRON |
获取价格 |
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-7, HERMETIC SEALED, GLASS PACKAG | |
JANTXV1N5623US | SENSITRON |
获取价格 |
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2 | |
JANTXV1N5623US | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS PACKAGE-2 | |
JANTXV1N5629 | MICROSEMI |
获取价格 |
1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |