Datasheet > JANTXV1N3826AUR-1

JANTXV1N3826AUR-1

更新时间： 2025-09-15 19:19:59

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
2页	33K
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稳压精度:±5%;元器件封装:DO-213;

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JANTXV1N3826AUR-1 数据手册

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1N3821AUR-1

• 1N3821AUR-1 thru 1N3828AUR-1 AVAILABLE IN JAN, JANTX AND JAN-

TXV

thru

1N3828AUR-1

PER MIL-PRF-19500/115

and

• LEADLESS PACKAGE FOR SURFACE MOUNT

• DOUBLE PLUG CONSTRUCTION

CDLL3821 thru CDLL 3828A

MAXIMUM RATINGS

Operating Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

DC Power Dissipation: 1 watt @ +T

= 125°C

Power Derating: 20 mW / °C above T

= 125°C

Forward Voltage @ 200mA = 1.2 volts maximum

ELECTRICAL CHARACTERISTICS @ 25°C

MILLIMETERS

INCHES

CDI

TYPE

NOMINAL

ZENER

TEST

MAX. DC

ZENER

DIM MIN MAX MIN MAX

MAXIMUM ZENER IMPEDANCE

MAX. REVERSE

2.39

0.41

4.80

2.66 .094 .105

0.55 .016 .022

5.20 .189 .205

NUMBER

VOLTAGE

CURRENT

LEAKAGE CURRENT

@ 1

ZK=1mA

@ V

(NOTE 2)

(NOTE 1)

(NOTE 3)

4.11 REF.

0.03 MIN.

.159 REF.

.001 MIN.

VOLTS

OHMS

µ A

VOLTS

CDLL3821

CDLL3821A

CDLL3822

CDLL3822A

3.3

3.6

400

276

252

100

FIGURE 1

DESIGN DATA

CDLL3823

CDLL3823A

CDLL3824

CDLL3824A

3.9

4.3

400

238

213

CASE: DO-213AB, Hermetically sealed

glass case. (MELF, LL41)

CDLL3825

CDLL3825A

CDLL3826

CDLL3826A

4.7

5.1

500

550

194

178

LEAD FINISH: Tin / Lead

THERMAL RESISTANCE: (R

°C/W maximum at L = 0 inch

): 50

OJEC

CDLL3827

CDLL3827A

CDLL3828

CDLL3828A

5.6

6.2

600

700

162

146

THERMAL IMPEDANCE: (ZO ): 15

°C/W maximum

POLARITY: Diode to be operated with the

banded (cathode) end positive.

MOUNTING POSITION: Any.

NOTE 1

No suffix = + 10% tolerance on nominal Zener voltage, suffix “A” signifies +5%, "C" suffix

signifies + 2% and "D" suffix signifies + 1%.

MOUNTING SURFACE SELECTION:

The Axial Coefficient of Expansion (COE)

Of this Device is Approximately

+6PPM/°C. The COE of the Mounting

Surface System Should Be Selected To

Provide A Suitable Match With This

Device.

NOTE 2

NOTE 3

Zener impedance is derived by superimposing on 1

A 60Hz rms a.c. current equal to

10% of 1

ZT.

Zener voltage is measured with the device junction in thermal equilibrium at an ambient

temperature of 25°C + 3°C.

6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841

PHONE (978) 620-2600

FAX (978) 689-0803

WEBSITE: http://www.microsemi.com

109

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与JANTXV1N3826AUR-1相关器件

型号	品牌	获取价格	描述	数据表
JANTXV1N3826AUR-1/TR	MICROCHIP	获取价格	稳压精度:±5%;最大耗散功率（PD）:1 W;反向电流（Ir）:3 µA @ 1 V;额
JANTXV1N3826AUR-1TR	MICROSEMI	获取价格	SILICON 1 WATT ZENER DIODES
JANTXV1N3826CUR-1	MICROSEMI	获取价格	Zener Diode, 5.1V V(Z), 2%, 1W, Silicon, Unidirectional, DO-213AB, DO-213AB, 2 PIN
JANTXV1N3826CUR-1	MICROCHIP	获取价格	稳压精度:±2%;元器件封装:DO-213;
JANTXV1N3826CUR-1/TR	MICROCHIP	获取价格	稳压精度:±2%;最大耗散功率（PD）:1 W;反向电流（Ir）:3 µA @ 1 V;额
JANTXV1N3826D-1	MICROSEMI	获取价格	Zener Diode, 5.1V V(Z), 1%, 1W, Silicon, Unidirectional, DO-41, DO-41, 2 PIN
JANTXV1N3826D-1	MICROCHIP	获取价格	稳压精度:±1%;元器件封装:DO-41;
JANTXV1N3826D-1/TR	MICROCHIP	获取价格	稳压精度:±1%;最大耗散功率（PD）:1 W;反向电流（Ir）:3 µA @ 1 V;额
JANTXV1N3826DUR-1	MICROSEMI	获取价格	Zener Diode, 5.1V V(Z), 1%, 1W, Silicon, Unidirectional, DO-213AB, DO-213AB, 2 PIN
JANTXV1N3826DUR-1/TR	MICROCHIP	获取价格	稳压精度:±1%;最大耗散功率（PD）:1 W;反向电流（Ir）:3 µA @ 1 V;额

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