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JANTX4N48 PDF预览

JANTX4N48

更新时间: 2023-12-06 19:52:48
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TTELEC /
页数 文件大小 规格书
4页 533K
描述
High Reliability / JAN - Optically Coupled Isolator

JANTX4N48 数据手册

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Hi-Reliability Optically Coupled Isolator  
JANTX/JANTXV 4N47  
JANTX/JANTXV 4N48 [A]  
JAN/JANTX/JANTXV 4N49 [A]  
Electrical Characterisꢀcs (TA = 25° C unless otherwise noted)  
SYMBOL  
PARAMETER  
MIN  
TYP MAX UNITS  
TEST CONDITIONS  
Input Diode  
0.80  
1.00  
0.70  
-
-
-
1.50  
1.70  
1.30  
IF = 10.0 mA  
IF = 10.0 mA, TA = -55° C(1)  
VF  
IR  
Forward Voltage  
Reverse Current  
V
IF = 10.0 mA, TA = 100° C(1)  
-
-
100  
µA  
VR= 2.0 V  
Output Phototransistor  
40  
45  
7
-
-
-
-
-
-
-
-
V
V
IC = 1.0 mA, IB = 0, IF = 0  
IC = 100 µA, IB = 0, IF = 0  
IE = 100 µA, IC = 0, IF = 0  
VCE = 20 V, IB = 0, IF = 0  
V(BR)CEO Collector-Emiꢁer Breakdown Voltage  
V(BR)CBO Collector-Base Breakdown Voltage  
-
V
V(BR)EBO Emiꢁer-Base Breakdown Voltage  
1
-
100  
100  
10  
nA  
µA  
nA  
IC(OFF)  
Collector-Emiꢁer Dark Current  
Collector-Emiꢁer Dark Current  
2
-
VCE = 20 V, IB = 0, IF = 0, TA = 100° C(1)  
IC(OFF)  
-
VCB = 20 V, IE = 0, IF = 0  
ICB(OFF) Collector-Base Dark Current  
Coupled  
On-State Collector Current  
IF = 1.0 mA, VCE = 5.0 V, IB = 0  
0.50  
0.70  
0.50  
-
-
-
-
-
-
IF = 2.0 mA, VCE = 5.0 V, IB = 0, TA = -55° C(1)  
IF = 2.0 mA, VCE = 5.0 V, IB = 0, TA = 100° C(1)  
IF = 1.0 mA, VCE = 5.0 V, IB = 0  
JAN / JANTX / JANTXV 4N47 [A]  
-
-
-
5
-
-
1.00  
1.40  
1.00  
IF = 2.0 mA, VCE = 5.0 V, IB = 0, TA = -55° C(1)  
IF = 2.0 mA, VCE = 5.0 V, IB = 0, TA = 100° C(1)  
mA  
IC(ON)  
JAN / JANTX / JANTXV 4N48 [A]  
IF = 1.0 mA, VCE = 5.0 V, IB = 0  
-
-
-
10  
-
-
2.00  
2.80  
2.00  
IF = 2.0 mA, VCE = 5.0 V, IB = 0, TA = -55° C(1)  
IF = 2.0 mA, VCE = 5.0 V, IB = 0, TA = 100° C(1)  
JAN / JANTX / JANTXV 4N49 [A]  
30  
-
-
µA  
V
VCB = 5 V, IE = 0, IF = 10 mA  
ICB(ON)  
On-State Collector Base  
Collector-Emiꢁer Saturaꢀon Voltage  
JAN / JANTX / JANTXV 4N47 [A]  
JAN / JANTX / JANTXV 4N48 [A]  
JAN / JANTX / JANTXV 4N49 [A]  
IF = 2.0 mA, IC = 0.5 mA, IB = 0  
IF = 2.0 mA, IC = 1.0 mA, IB = 0  
IF = 2.0 mA, IC = 2.0 mA, IB = 0  
-
-
-
-
-
-
0.30  
0.30  
0.30  
VCE(SAT)  
100  
1011  
-
-
-
-
-
-
V
Ω
VCE = 5.0 V , IC = 10.0 mA, IF = 0 mA  
VI-O = ± 1000 VDC(3)  
HFE  
RIO  
CIO  
DC Current Gain  
Resistance (Input-to-Output)  
Capacitance (Input-to-Output)  
5
pF  
VI-O = 0 V, f = 1.0 MHz(3)  
-
-
20  
µs  
VCC = 10.0 V, IF = 5.0 mA, RL = 100 Ω  
tr, tf  
Rise and Fall Time  
Notes:  
1. Guaranteed but not tested.  
2. Sample tested, LTPD = 10.  
3. Measured with input leads shorted together and output leads shorted together.  
General Note  
TT Electronics | OPTEK Technology  
2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200  
www.ꢁelectronics.com | sensors@ꢁelectronics.com  
TT Electronics reserves the right to make changes in product specificaꢀon without  
noꢀce or liability. All informaꢀon is subject to TT Electronicsown data and is  
considered accurate at ꢀme of going to print.  
Rev H 05/2022 Page 3  
© TT electronics plc  

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