Datasheet > JANTX1N4622D-1

JANTX1N4622D-1

更新时间： 2024-02-10 15:11:04

品牌	Logo	应用领域
CDI-DIODE		测试二极管
页数	文件大小	规格书
25页	225K
描述
Zener Diode, 3.9V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-35, DO-7, 2 PIN

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JANTX1N4622D-1 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	DO-35
包装说明：	O-LALF-W2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.76
其他特性：	METALLURGICALLY BONDED	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	JEDEC-95代码：	DO-204AH
JESD-30 代码：	O-LALF-W2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
最高工作温度：	175 °C	最低工作温度：	-65 °C
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	0.48 W
认证状态：	Not Qualified	参考标准：	MIL
标称参考电压：	3.9 V	表面贴装：	NO
技术：	ZENER	端子面层：	TIN LEAD
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	最大电压容差：	1%
工作测试电流：	0.25 mA	Base Number Matches：	1

JANTX1N4622D-1 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 18 August 2007.

INCH-POUND

MIL-PRF-19500/435H

18 May 2007

SUPERSEDING

MIL-PRF-19500/435G

10 November 2005

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES

1N4099-1 THROUGH 1N4135-1, 1N4614-1 THROUGH 1N4627-1, 1N4099UR-1 THROUGH 1N4135UR-1,

1N4614UR-1 THROUGH 1N4627UR-1, PLUS C AND D TOLERANCE SUFFIX DEVICES,

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage

regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are

provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for

each unencapsulated device type (die). For JANHC and JANKC quality levels see 6.5.

* 1.2 Physical dimensions. See figure 1 (DO-35), figure 2 (DO-213AA), and figure 3 (JANHC and JANKC).

* 1.3 Maximum ratings Unless otherwise specified T_C= 25°C. Maximum ratings are as shown in maximum test

ratings herein (see 3.8), and as follows:

P_TL= 500 mW (DO-35) at T_L= 50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at

L = .375 inch (9.53 mm). (Derate I_Zto 0.0 mA dc at +175°C).

_TEC= 500 mW (DO-213AA) at T_EC= 125°C. (Derate to 0 at 175°C). -65°C ≤ T_J≤ +175°C; -65°C ≤ T_STG

≤ +175°C.

= 400 mW, T = +55°C. (Derate to 0 at +55°C).

TPCB

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,

ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil.

Since contact information can change, you may want to verify the currency of this address information using the

ASSIST Online database at http://assist.daps.dla.mil.

AMSC N/A

FSC 5961

12 3 4 5 6 7...25

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与JANTX1N4622D-1相关器件

型号	品牌	描述	获取价格	数据表
JANTX1N4622D-1/TR	MICROSEMI	Zener Diode, 3.9V V(Z), 1%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLA	获取价格
JANTX1N4622DUR	MICROSEMI	GLASS SURFACE MOUNT 0.5 WATT ZENERS	获取价格
JANTX1N4622DUR-1	MICROSEMI	GLASS SURFACE MOUNT 0.5 WATT ZENERS	获取价格
JANTX1N4622DURTR	MICROSEMI	GLASS SURFACE MOUNT 0.5 WATT ZENERS	获取价格
JANTX1N4622DURTR-1	MICROSEMI	GLASS SURFACE MOUNT 0.5 WATT ZENERS	获取价格
JANTX1N4622UR	MICROSEMI	GLASS SURFACE MOUNT 0.5 WATT ZENERS	获取价格

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