Datasheet > JANSM2N3019/TR

JANSM2N3019/TR

更新时间： 2024-01-29 01:01:12

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
7页	278K
描述
Small Signal Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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JANSM2N3019/TR 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.83
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

JANSM2N3019/TR 数据手册

JANS_2N3019 and JANS_2N3019S

Qualified Levels:

RADIATION HARDENED LOW POWER

JANSM, JANSD,

JANSP, JANSL, and

JANSR

NPN SILICON TRANSISTOR

Qualified per MIL-PRF-19500/391

DESCRIPTION

This RHA level 2N3019 and 2N3019S NPN leaded metal device is RAD hard qualified for

high-reliability applications. Microsemi also offers numerous other transistor products to meet

higher and lower power ratings with various switching speed requirements in both through-

hole and surface-mount packages.

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES

•

JEDEC registered 2N3019.

TO-39 (TO-205AD)

and TO-5 Package

RHA level JAN qualifications per MIL-PRF-19500/391 (see part nomenclature for all options).

Also available in:

TO-46 (TO-206AB)

(leaded)

JANS_2N3057A

APPLICATIONS / BENEFITS

•

Leaded TO-39 and TO-5 package.

Lightweight.

TO-18 (TO-206AA)

(leaded)

Low power.

JANS_2N3700

Military and other high-reliability applications.

UB package

(leaded)

JANS_2N3700UB

MAXIMUM RATINGS @ T_A= +25 ^oC unless otherwise noted

Parameters/Test Conditions

Junction and Storage Temperature

Thermal Resistance Junction-to-Ambient

Thermal Resistance Junction-to-Case

Collector-Emitter Voltage

Symbol

T_Jand T_STG

R_ӨJA

Value

-65 to +200

195

Unit

^oC

^oC/W

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

R_ӨJC

V_CEO

Collector-Base Voltage

V_CBO

140

Emitter-Base Voltage

V_EBO

7.0

Fax: (978) 689-0803

Collector Current

I_C

1.0

Total Power Dissipation:

@ T_A= +25 ^oC ⁽¹⁾

@ T_C= +25 ^oC ⁽²⁾

P_D

0.8

MSC – Ireland

5.0

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Notes: 1. Derate linearly 4.6 mW/°C for T_A≥ +25 °C.

2. Derate linearly 28.6 mW/°C for T_C≥ +25 °C.

Website:

www.microsemi.com

T4-LDS-0098, Rev. 3 (120177)

Page 1 of 7

12 3 4 5 6 7

中文翻译

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与JANSM2N3019/TR相关器件

型号	品牌	获取价格	描述	数据表
JANSM2N3057A	MICROSEMI	获取价格	Small Signal Bipolar Transistor,
JANSM2N3439UA	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC,
JANSM2N3440	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD
JANSM2N3440L	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO
JANSM2N3440UA	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC,
JANSM2N3498	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205
JANSM2N3498L	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
JANSM2N3498L/TR	MICROSEMI	获取价格	Small Signal Bipolar Transistor,
JANSM2N3499/TR	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205
JANSM2N3500	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-205

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