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JANS1N6491DUS

更新时间: 2024-10-03 13:08:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管齐纳二极管
页数 文件大小 规格书
2页 125K
描述
Zener Diode, 5.6V V(Z), 1%, 1.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, D-5A, 2 PIN

JANS1N6491DUS 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:O-LELF-R2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.33其他特性:HIGH RELIABILITY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:O-LELF-R2JESD-609代码:e0
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:1.5 W
认证状态:Qualified参考标准:MIL-19500/406
标称参考电压:5.6 V表面贴装:YES
技术:ZENER端子面层:Tin/Lead (Sn/Pb)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:1%
工作测试电流:45 mABase Number Matches:1

JANS1N6491DUS 数据手册

 浏览型号JANS1N6491DUS的Datasheet PDF文件第2页 
1N6485  
THRU  
1N6491  
AND  
1N4460  
AND  
• AVAILABLE IN JAN, JANTX, JANTXV, AND JANS  
PER MIL-PRF-19500/406  
• 1.5 WATT ZENER DIODES  
• NON CAVITY CONSTRUCTION  
• METALLURGICALLY BONDED  
1N4461  
0.060/0.085  
MAXIMUM RATINGS  
1.52/2.16  
Operating Temperature: -65°C to +175°C  
Storage Temperature: -65°C to +200°C  
Power Dissapation: 1.5W @ T =+25°C  
A
Power Derating: 10mW/°C above T =+25°C  
A
Forward Voltage: 1.0 V dc @ I =200mA dc  
F
1.5 V dc @ I =1A dc  
F
0.125/0.160  
3.18/4.06  
POLARITY  
BAND  
(CATHODE)  
0.800  
20.32  
0.028/0.032  
0.71/0.81  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified  
ZENER  
TEST  
DYNAMIC  
KNEE  
TEST  
REVERSE TEST  
MAXIMUM V  
Z
(REG)  
MAXIMUM  
SURGE  
VOLTAGE CURRENT IMPEDENCE IMPEDENCE CURRENT CURRENT VOLTAGE CURRENT  
±5%  
V
V
Z
TYPE  
I
(MAX.)  
(MAX.)  
I
(MAX.)  
I @V  
R
V
I
ZM  
ZT  
ZK  
R
FIGURE 1  
V
Z
Z
@I  
Z
@I  
ZT ZT  
ZK ZT  
R
VOLTS  
mA  
OHMS  
OHMS  
mA  
µ A  
VOLTS  
MA  
VOLTS  
AMPS  
1N6485  
1N6486  
1N6487  
1N6488  
3.3  
3.6  
3.9  
4.3  
76.0  
69.0  
64.0  
58.0  
10  
10  
9
400  
400  
400  
400  
1.0  
1.0  
1.0  
1.0  
50  
50  
35  
5.0  
1.0  
1.0  
1.0  
1.0  
433  
397  
366  
332  
.90  
.80  
.75  
.70  
4.2  
3.9  
3.6  
3.3  
DESIGN DATA  
9
1N6489  
1N6490  
1N6491  
1N4460  
1N4461  
4.7  
5.1  
5.6  
6.2  
6.8  
53.0  
49.0  
45.0  
40.0  
37.0  
8
7
5
4
2.5  
500  
500  
600  
200  
200  
1.0  
1.0  
1.0  
1.0  
1.0  
4.0  
1.0  
0.5  
10.0  
5.0  
1.0  
1.0  
2.0  
3.72  
4.08  
304  
280  
255  
230  
210  
.60  
.50  
.40  
.35  
.30  
3.0  
2.7  
2.5  
2.3  
2.1  
CASE: Hermetically sealed, Glass “A”  
Body per MIL-PRF- 19500/406  
D-5A  
LEAD MATERIAL: Copper clad steel  
LEAD FINISH: Tin / Lead  
NOTE: Zener voltage is measured with the device junction in thermal equilibrium at an  
ambient temperature of 25°C ± 3°C.  
THERMAL RESISTANCE: (R  
°C/W maximum at L = .375  
): 42  
OJL  
THERMAL IMPEDANCE: (Z  
°C/W maximum  
): 4.5  
OJX  
POLARITY: Diode to be operated with  
the banded (cathode) end positive.  
MOUNTING POSITION: Any  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
FAX (781) 689-0803  
WEBSITE: http://www.microsemi.com  
71  

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