是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | O-LELF-R2 | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.92 |
其他特性: | HIGH RELIABILITY | 应用: | ULTRA FAST RECOVERY |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | O-LELF-R2 |
JESD-609代码: | e0 | 最大非重复峰值正向电流: | 75 A |
元件数量: | 1 | 相数: | 1 |
端子数量: | 2 | 最大输出电流: | 1.55 A |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 600 V |
最大反向恢复时间: | 0.03 µs | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | WRAP AROUND |
端子位置: | END | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANIN6629US | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 1.15A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS, | |
JANIN6631US | MICROSEMI |
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Rectifier Diode, 1 Phase, 1 Element, 1.15A, 1000V V(RRM), Silicon, HERMETIC SEALED, GLASS, | |
JANJ2N2907A | MICROSEMI |
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Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, | |
JANJ2N6989 | MICROSEMI |
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Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Glass | |
JANKC1N3822A | CDI-DIODE |
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Zener Diode, 3.6V V(Z), 5%, Silicon, Unidirectional, | |
JANKC1N3823A | CDI-DIODE |
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Zener Diode, 3.9V V(Z), 5%, Silicon, Unidirectional, | |
JANKC1N3824A | CDI-DIODE |
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Zener Diode, 4.3V V(Z), 5%, Silicon, Unidirectional, | |
JANKC1N3825A | CDI-DIODE |
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Zener Diode, 4.7V V(Z), 5%, Silicon, Unidirectional, | |
JANKC1N3826A | CDI-DIODE |
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Zener Diode, 5.1V V(Z), 5%, Silicon, Unidirectional, | |
JANKC1N4099 | CDI-DIODE |
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Zener Diode, 6.8V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-1 |